Asml Netherlands B.v.

John Tom Stewart

Andrew David LaForge

Chunguang Xia

Yue Ma

Igor Vladimirovich Fomenkov

Alexander Igorevich Ershov

Dzmitry Labetski

Christianus Wilhelmus Johannes Berendsen

Henricus Gerardus Tegenbosch

Klaus Martin Hummler

Marc Guy Langlois

Kornelis Frits Feenstra

Kerim Nadir

Alexander Shatalov

Arun Johnkadaksham

Matthias Kraushaar

Maksim Loginov

Seyedmohammad Mojab

Robert Jay Rafac

Jonghoon Baek

David Robert Evans

Rui Miguel Duarte Rodrigues Nunes

Deniz Van Heijnsbergen

Rui Miguel Duarte Rodreigues Nunes

Nina Vladimirovna Dziomkina

An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

Guiding device and associated system

In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

Cleaning a structure surface in an EUV chamber

A first target is provided to an interior of a vacuum chamber, a first light beam is directed toward the first target to form a first plasma from target material of the first target, the first plasma being associated with a directional flux of particles and radiation emitted from the first target along a first emission direction, the first emission direction being determined by a position of the first target; a second target is provided to the interior of the vacuum chamber; and a second light beam is directed toward the second target to form a second plasma from target material of the second target, the second plasma being associated with a directional flux of particles and radiation emitted from the second target along a second emission direction, the second emission direction being determined by a position of the second target, the first and second emission directions being different.

Reducing the effect of plasma on an object in an extreme ultraviolet light source

Growing community of inventors

Escondido, CA, United States of America

John Tom Stewart