Astralux, Inc.

Other

John Tarje Torvik

Jacques I Pankove

A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C&#x2014;SiC, and hexagonal SiC, wherein the quantum dots are sandwiched between an n-type semiconductor cladding layer selected from a group consisting of SiC, 3C&#x2014;SiC, 4H&#x2014;SiC, 6H&#x2014;SiC and diamond, and a p-type semiconductor cladding layer selected from a group consisting of SiC, 3C&#x2014;SiC, 4H&#x2014;SiC, 6H&#x2014;SiC and diamond. A Ni contact is provided for the n-type cladding layer. An Al, a Ti or an Al/Ti alloy contact is provided for the p-type cladding layer. The quantum dots have a thickness that is no greater than about 250 Angstroms, a width that is no greater than about 200 Angstroms, and a center-to-center spacing that is in the range of from about 10 Angstroms to about 1000 Angstroms.

Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters

A bipolar transistor includes a collector that is selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), a base that is selected from the group Si, Ge and SiGe, at least a first emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, and at least a second emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon. Direct-wafer-bonding is used to assemble the bipolar transistor. In an embodiment the bandgap of the collector, the bandgap of the at least a first emitter and the bandgap of the at least a second emitter are larger than the bandgap of the base.

Heterojunction bipolar transistor containing at least one silicon carbide layer

A hybrid semiconductor substrate assembly is made by first forming a silicon oxide (SiO ) layer within a silicon carbide wafer, thus forming a silicon carbide membrane on top of the silicon oxide layer and on a surface of the silicon carbide wafer. Optionally, the silicon oxide layer is then thermally oxidized in the presence of steam or oxygen. A substrate-of-choice is then wafer bonded to the silicon carbide membrane, optionally in the presence of a wetting layer that is located intermediate the substrate-of-choice and the silicone carbide membrane, the wetting layer containing silicon. The silicon oxide layer is then removed by hydrofluoric acid etching, to thereby provide a hybrid semiconductor substrate assembly that includes the substrate-of-choice wafer bonded to the silicon carbide membrane. The hybrid semiconductor substrate assembly is then annealed. The method is repeated a plurality of times, to thereby provide a plurality of hybrid semiconductor substrate assemblies, each assembly including a substrate-of-choice wafer bonded to a silicon carbide membrane. Optionally, an annealing step may be provided after the silicon oxide layer is formed and prior to wafer bonding.

Method of making a hybride substrate having a thin silicon carbide membrane layer

A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C&mdash;SiC, and hexagonal SiC, wherein the quantum dots are sandwiched between an n-type semiconductor cladding layer selected from a group consisting of SiC, 3C&mdash;SiC, 4H&mdash;SiC, 6H&mdash;SiC and diamond, and a p-type semiconductor cladding layer selected from a group consisting of SiC, 3C&mdash;SiC, 4H&mdash;SiC, 6H&mdash;SiC and diamond. A Ni contact is provided for the n-type cladding layer. An Al, a Ti or an Al/Ti alloy contact is provided for the p-type cladding layer. The quantum dots have a thickness that is no greater than about 250 Angstroms, a width that is no greater than about 200 Angstroms, and a center-to-center spacing that is in the range of from about 10 Angstroms to about 1000 Angstroms.

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Louisville, CO, United States of America

John Tarje Torvik