Apple Inc.

University of California

King Abdulaziz City for Science and Technology

John T Leonard

Ion Bita

Jonathan S Steckel

Dmitry S Sizov

Xiaobin Xin

Nathaniel T Lawrence

Ranojoy Bose

Shuji Nakamura

Steven P DenBaars

James Stephen Speck

Jean-Jacques P Drolet

Erin C Young

Tal Margalith

Benjamin P Yonkee

Zhibing Ge

Yuan Chen

Lai Wang

Ove Lyngnes

Chia Hsuan Tai

Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

Micro LED based display panel

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

Hybrid growth method for III-nitride tunnel junction devices

A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

III-nitride tunnel junction with modified P-N interface

A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.

Displays with collimated light sources and quantum dots

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San Jose, CA, United States of America

John T Leonard