Agilent Technologies, Inc.

Avago Technologies Fiber IP (singapore) Pte. Ltd

John Stephen Massa

Rodney H Moss

Simon Andrew Wood

Adrian John Taylor

A semiconductor device is disclosed in which a barrier layer is deposited on the sides of the mesa. The barrier layer may comprise a semiconductor material. The barrier layer reduces diffusion of dopants into the active region of the device.

Semiconductor device

An oxide layer on an indium phosphide semiconductor substrate is doped with silicon. This enables epitaxial layers to be deposited upon the substrate in a conventional manner, including mesa etching and overgrowth, to form a semiconductor structure. The doped oxide layer is thought to reduce diffusion of phosphorus out of the substrate and thus to reduce the zinc levels in the active region of the structure. Additionally, or as an alternative, after mesa etching oxide can be formed on the mesa sides and then doped with silicon. Conventional blocking layers can then be formed over the doped oxide, reducing the diffusion of zinc from the blocking layers into the rest of the structure.

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Ipswich, United Kingdom

John Stephen Massa