Rfmd (uk) Limited

John Stephen Atherton

A diode assembly comprising first and second diodes each having a different breakdown voltage, each of the first and second diodes comprising a semiconductor substrate; an electrically conducting channel layer on the semiconductor substrate; an upper semiconductor layer on the channel layer, the upper semiconductor layer comprising a recess; first and second ohmic contacts on the upper semiconductor layer on opposite sides of the recess, the ohmic contacts being connected together to form a first diode contact; a gate electrode within the recess, the gate electrode forming a second diode contact; wherein the area of the recess of the first diode covered by the first gate electrode is different to the area of the recess of the second diode covered by the second gate electrode.

Diode assembly

A transistor includes a first electrode on a substrate, wherein the first electrode comprises a bus bar and has first and second first electrode fingers extending therefrom, the fingers being spaced apart to define a channel therebetween. The transistor also includes a second electrode on the substrate having a second electrode finger spaced apart from the first electrode and extending along the channel to define a gate region between the fingers. The gate region comprises a 'curved' portion beyond the end of the second electrode finger proximate to the bus bar of the first electrode and a gate electrode extends along the gate region, through the 'curved' gate portion. The substrate further comprises an active layer beneath the gate region, characterized in that the active layer extends beyond the end of the second electrode finger beneath the &#x201c;curved&#x201d; portion of the gate region.

Field effect transistor

A diode assembly comprising first and second diodes each having a different breakdown voltage, each of the first and second diodes comprising

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Darlington, United Kingdom

John Stephen Atherton