Motorola Corporation

John Song

Curtis D Moyer

James E Jaskie

Thomas Nilsson

Karen E Jachimowicz

Bernard F Coll

Eric P Menu

Chenggang Xie

Lawrence N Dworsky

Emmett Howard

Sung P Pack

Scott K Ageno

Ralph Cisneros

Robert P Nee

A portable electronic device with virtual image display including a semiconductor array providing a real image and an optical system mounted to receive the real image and produce a virtual image at a viewing aperture. Electronics are associated with the array to produce real images in accordance with messages received by a data source such as a communication receiver. The display is sufficiently small to mount in a hand held microphone for viewing by the operator while using the microphone.

Electronic device with miniature virtual image display

A field emission device (,) includes an electron emitter (,), a first dielectric focusing layer (,) defining a first aperture (,), and a second dielectric focusing layer (,) defining a second aperture (,). Second dielectric focusing layer (,) is disposed on first dielectric focusing layer (,). The dielectric constant of second dielectric focusing layer (,) is less than the dielectric constant of first dielectric focusing layer (,). During the operation of field emission device (,), electron emitter (,) emits an electron beam (,), which is focused as it travels through first aperture (,) and then through second aperture (,).

Field emission device having dielectric focusing layers

A portable communications receiver with virtual image display including a semiconductor array providing a real image and an optical system mounted to receive the real image and produce a virtual image at a viewing aperture. Electronics are associated with the array to produce real images in accordance with messages received by the receiver. The display is sufficiently small to mount in a hand held microphone for viewing by the operator while using the microphone.

Receiver with miniature virtual image display

An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus, (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.

Field emission device having an amorphous multi-layered structure

An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.

Amorphous multi-layered structure and method of making the same

A method for fabricating a diamond-like carbon field emission device (300, 800) includes the steps of: (i) forming on a column conductor (330, 830) a ballast layer (364), (ii) forming on the ballast layer (364), in registration with a central well region (332, 832) of the column conductor (330, 830), a surface emitter (370, 870) made from diamond-like carbon, (iii) forming on the ballast layer (364) and surface emitter (370, 870) a field shaping layer (374), (iv) pattering the ballast layer (364) and the field shaping layer (374) to form a ballast (365) and field shaper layer (377) having opposed edges which, with the opposed edges of the column conductor (330, 830), define smooth, continuous surfaces (371, 871), (v) depositing a blanket dielectric layer (341), and (vi) forming an emission well (360, 860) above the central well region (332, 832) of the column conductor (330, 830).

Method for fabricating a field emission device having reduced

An edge emission FED (100) includes a supporting substrate (110); a cathode (120) disposed on the supporting substrate (110); a ballast layer (130) disposed on the cathode (120); an emissive layer (140) disposed on the ballast layer (130) and defining an emissive edge (183); a field shaper layer (150) disposed on the emissive layer (140); a dielectric layer (160) disposed on the field shaper layer (150); a gate extraction electrode (170) disposed on the dielectric layer (160); an emission well (180) defined by the ballast layer (130), the emissive edge (183), the field shaper layer (150), the dielectric layer (160), and the gate extraction electrode (170); and an anode plate (188) opposing the gate extraction electrode (170).

Edge emission field emission device

A field emission device (200, 300, 400, 500) includes a supporting substrate (210, 310, 410, 510), a cathode (215, 315, 415, 515) formed thereon, a plurality of electron emitters (270, 370, 470, 570) and a plurality of gate extraction electrodes (250, 350, 450, 550) proximately disposed to the plurality of electron emitters (270, 370, 470, 570) for effecting electron emission therefrom, a major dielectric surface (248, 348, 448, 548) disposed between the plurality of gate extraction electrodes (250, 350, 450, 550), a charge dissipation layer (252, 352, 452, 552) formed on the major dielectric surface (248, 348, 448, 548), and an anode (280, 380, 480, 580) spaced from the gate extraction electrodes (250, 350, 450, 550).

Field emission device

An improved field emission device (200, 800) includes a supporting substrate (210, 810), a conductive layer (215, 815) formed on the supporting substrate (210,810), a dielectric layer (240, 840) formed on the conductive layer (215, 815) and defining an emitter well (260, 860), a charge bleed-off barrier (290, 890)provided on the lateral surfaces (245, 845) of the emitter well, an electron emitter (270, 870) located within the emitter well (260, 860), a gate extraction electrode (250, 850) formed on the dielectric layer (240, 840) and spaced from the electron emitter (270, 870), and an anode (280, 880) spaced from the gate extraction electrode (250, 850).

Field emission device having a charge bleed-off barrier

Field emission device having reduced row-to-column leakage

Manufacturing a single substrate fluorescent display including forming a first conductive layer on a substrate, depositing a first insulating layer on the first conductive layer, depositing a second conductive layer in horizontal rows on the first insulating layer, depositing a second insulating layer on the second conductive layer, and depositing an electron emitting layer of low work function material in columns on the second insulating layer so as to define a plurality of pixels at the column/row intersections. An opening is formed at each pixel extending through the layer of electron emitting material, the second insulating layer, the second conductive layer and the first insulating layer to the first conductive layer. A layer of light emitting material is deposited on the first conductive layer in the opening at each pixel.

Single substrate, vacuum fluorescent display incorporating triode light

A single substrate, vacuum fluorescent display including a first layer of electrically conductive material positioned on a supporting substrate and a light emitting layer including phosphor positioned on the first layer. A second layer of electrically conductive material is supported on the substrate and electrically insulated from the first layer. An electron emitting layer of low work function material is positioned on the second layer and further positioned so that emitted electrons strike the light emitting layer. Since both the electron emitting and the light emitting layers are supported on the substrate, an encapsulating window is simple and easy to construct. Integrated drivers are optionally formed in the supporting substrate.

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Tempe, AZ, United States of America

John Song