Axcelis Technologies, Inc.

Cryovac, Inc.

John Scott Hallock

Robert Douglas Mohondro

Cynthia Louise Ebner

Ivan Berry

Mahmoud Dahimene

Michael Owens

Palani Sakthivel

Alan Frederick Becknell

Stuart Rounds

A method of enabling the removal of fluorine containing residue from a semiconductor substrate comprising applying a gas and/or vapor to which the residue is reactive to the residue while the temperature of the substrate is at an elevated level with respect to ambient temperature and the residue is exposed to ultraviolet radiation, for a time period which is sufficient to effect at least one of volatilizing the residue or rendering the residue hydrophilic enough to be removable with deionized water.

Method of photoresist ash residue removal

A process for reducing roughness from a surface of a patterned photoresist. The process includes exposing a substrate having the patterned photoresist thereon to a vapor, wherein the vapor penetrates into and/or reacts with the surface of the photoresist. The substrate having the patterned photoresist thereon is then heated to a temperature and for a time sufficient to cause the surface of the photoresist to flow and/or react with the vapor wherein the surface roughness decreases. Optionally, the substrate is exposed to radiation during the process to increase the etch resistance of the photoresist and/or facilitate the reaction of the vapor with the surface of the photoresist.

Process for reducing edge roughness in patterned photoresist

A process for stripping a photoresist layer after exposure to an ion implantation process. The process includes subjecting a substrate having the ion implanted photoresist layer thereon to a UV radiation exposure and subsequently removing the ion implanted photoresist by conventional stripping processes.

Process for removal of photoresist after post ion implantation

A process for altering exposed and developed photoresist features. The photoresist features are exposed to at least one compound that will react with at least one of itself and at least one component of the photoresist. The reaction takes place in the presence of at least one component of the photoresist. The photoresist features are exposed to reaction-initiating energy during at least one time selected from the group consisting of prior to, simultaneous with and subsequent to exposing the photoresist features to the at least one compound.

UV assisted chemical modification of photoresist

A composition suitable for scavenging oxygen is disclosed which comprises a carrier having a combination of a hydroxosulfitometalate and a transition metal ion source.

Oxygen scavenger compositions

An oxygen scavenging system and composition capable of providing good oxygen absorption activity and capabilities, wherein the system comprises a modified anionic hydrotalcite particulate material and a transition metal ion source.

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Potomac, MD, United States of America

John Scott Hallock