Scientific Systems Research Limited

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Scientific System Research Limited

John Scanlan

Kevin O'Leary

Michael Hopkins

Marcus Carbery

Ciaran O'Morain

Barry Coonan

Stephen Daniels

Justin Lawler

A method of fault identification on a semiconductor manufacturing tool includes monitoring tool sensor output, establishing a fingerprint of tool states based on the plurality of sensors outputs, capturing sensor data indicative of fault conditions, building a library of such fault fingerprints, comparing present tool fingerprint with fault fingerprints to identify a fault condition and estimating the effect of such a fault condition on process output. The fault library is constructed by inducing faults in a systematic way or by adding fingerprints of known faults after they occur.

Method for process control of semiconductor manufacturing equipment

A method for determining optimum plasma chamber cleaning cycles based on an electrical precursor signal. Polymer build up on the interior wall of plasma chamberduring normal production runs is monitored by observing the phase of the fundamental RF signal on a pre-selected baseline process. At a predetermined level of this signal, the chamber processing is stopped and the chamber walls are cleaned.

Plasma chamber cleaning

A method of fault classification in a plasma process chamber powered by an RF source includes initially running a plurality of different baseline plasma processes on the chamber. For each baseline process, the magnitudes of a plurality of Fourier components of delivered RF power are determined and stored as an impedance fingerprint for that baseline process. In the case of a fault, one or more of the baseline processes is repeated according to a predetermined decision tree to determine the current fingerprints and classify the fault by comparing the current fingerprints with the original fingerprints.

Fault classification in a plasma process chamber

A method of fault detection is described for use in a plasma process chamber powered by an RF source and subject to periodic standard preventive maintenance. Prior to a production run, the changes in magnitude of a plurality of Fourier components of the RF source resulting from known changes in a plurality of process conditions are determined and a single parameter which is a linear combination of a selected subset of said components is constructed. The construction is such that the combination is relatively sensitive to pre-selected process changes and relatively insensitive to said standard preventive maintenance. Then, during the production run, the single parameter is monitored to determine if there is a fault in the plasma process.

Method for fault detection in a plasma process

In a method of manufacturing a miniature multilayer device a low open area dielectric layer is selectively etched through to an underlying conductive region using an electrically conducting medium such as a plasma The endpoint of the etch process is determined by detecting the abrupt change in capacitance across the device just as the final portion of the dielectric layer is removed.

Endpoint detection in the etching of dielectric layers

A method for determining the optimum number of conditioning wafers to be run following a wet clean of the walls of an RF plasma chamber is based on an electrical precursor signal. Polymer build up on a plasma chamber wall during normal chamber conditioning is monitored by observing components of the fundamental RF signal. After a pre-determined number of wafers has been run, a predictive model is used to determine the total number of wafers needed to complete the conditioning cycle.

Plasma chamber conditioning

A method of fault identification in a plasma process powered by an RF source comprises initially determining, in respect of a given baseline plasma process, the changes in magnitude of a plurality of Fourier components of the RF source resulting from changes in a plurality of the process input parameters from their baseline values. These magnitude changes are stored as reference data. During a subsequent production run, the plasma process is monitored for faults and if one is found the baseline process is repeated with input parameter values nominally the same as the original baseline values. The changes in the Fourier components from the original baseline values are determined and compared with the reference data to determine which input parameter(s) have changed.

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Waterford, Ireland

John Scanlan