Northrop Grumman Systems Corporation

John S Mason, Jr

James T Kelliher

Ken Alfred Nagamatsu

Ishan Wathuthanthri

William J Sweet

Jonah Paul Sengupta

A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.

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Pasadena, MD, United States of America

John S Mason, Jr