International Business Machines Corporation

Ulvac, Inc.

John Rozen

Takashi Ando

Vijay Narayanan

Yohei Ogawa

Martin Michael Frank

Teodor Krassimirov Todorov

Douglas M Bishop

Jianshi Tang

Masanobu Hatanaka

Hemanth Jagannathan

Renee Tong Mo

Paul Charles Jamison

Hiroyuki Miyazoe

Robert L Bruce

Kevin K Chan

Ruqiang Bao

Jeng-Bang Yau

Yu Zhu

Jack Oon Chu

Paul Michael Solomon

Stephen McConnell Gates

Qing Cao

Eduard Albert Cartier

Seyoung Kim

Deborah A Neumayer

John Albrecht Ott

Matthew Warren Copel

Ko-Tao Lee

John Bruley

Marinus Hopstaken

Nobuyuki Kato

Takakazu Yamada

Kazuhiro Honda

Keon-chang Lee

A memory structure is provided. The memory structure includes a top terminal, a multi-level nonvolatile electrochemical cell, a bottom terminal, a pedestal contact in the same metal level as the bottom terminal, and a vertical conductor fully self-aligned to the multi-level nonvolatile electrochemical cell and extending vertically from the pedestal contact.

Self-aligned crossbar-compatible electrochemical memory structure

Methods of forming variable-resistance devices include forming a variable-resistance layer between a first terminal and a second terminal from a material that varies in resistance based on an oxygen concentration. An electrolyte layer is formed over the variable-resistance layer from a material that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. A conductive gate layer is formed over the electrolyte layer.

Three-terminal oxygen intercalation neuromorphic devices

A resistive switching memory stack, comprised of a bottom electrode, an oxide layer located on the bottom electrode; and a top electrode located on the oxide layer. The top electrode is comprised of a first layer, an intermediate layer located directly on the first layer, and a top layer located on top of the intermediate layer. Wherein the intermediate layer is comprised of a doped carbide active layer.

Etch-resistant doped scavenging carbide electrodes

Embodiments of the present invention are directed to forming a sub-stoichiometric metal-oxide film using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor can include a metal and a first ligand. The second precursor can include the same metal and a second ligand. A substrate can be exposed to the first precursor during a first pulse of an ALD cycle. The substrate can be exposed to the second precursor during a second pulse of the ALD cycle. The second pulse can occur directly after the first pulse without an intervening thermal oxidant. The substrate can be exposed to the thermal oxidant during a third pulse of the ALD cycle.

Sub-stoichiometric metal-oxide thin films

A method of fabricating a neuromorphic device includes forming a variable-resistance layer between a first terminal and a second terminal, the variable-resistance layer varies in resistance based on an oxygen concentration in the variable-resistance layer. The method further includes forming an electrolyte layer over the variable-resistance layer that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. The method further includes forming a gate layer over the electrolyte layer to apply a voltage on the electrolyte layer and the variable-resistance layer, the gate layer formed using an oxygen scavenging material.

Neuromorphic device with oxygen scavenging gate

An embodiment of the invention may include a first electrode, a second electrode, and a multi-level nonvolatile electrochemical cell located between the first electrode and second electrode. The multi-level nonvolatile electrochemical cell may have a read path and a write path through the cell, where the read path and the write path are different.

Three-dimensional confined memory cell with decoupled read-write

An embodiment of the invention may include a memory structure. The memory structure may include a first terminal connected to a first contact. The memory structure may include a second terminal connected to a second contact and a third contact. The memory structure may include a multi-level nonvolatile electrochemical cell having a variable resistance channel and a programming gate. The memory structure may include the first contact and second contact connected to the variable resistance channel. The memory structure may include the third contact is connected to the programming gate. This may enable decoupled read-write operations of the device.

Two-terminal non-volatile memory cell for decoupled read and write operations

Embodiments of the present invention are directed to forming a ternary compound using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor includes a first metal and a first ligand. The second precursor includes a second metal and a second ligand. The second ligand is selected based on the first ligand to target a second metal uptake. A substrate is exposed to the first precursor during a first pulse of an ALD cycle and the substrate is exposed to the second precursor during a second pulse of the ALD cycle, the second pulse occurring after the first pulse. The substrate is exposed to a third precursor (e.g., an oxidant) during a third pulse of the ALD cycle. The ternary compound can include a ternary oxide film.

Ligand selection for ternary oxide thin films

A neuromorphic semiconductor device includes a copper-based intercalation channel disposed on an insulative layer, a source contact and a drain contact of a substrate. A copper-based electrolyte layer is disposed on the copper-based intercalation channel and a copper-based gate electrode is disposed on the copper-based electrolyte layer.

Neuromorphic device driven by copper ion intercalation

A laterally switching cell structure including a metal-insulator-metal stack includes an active metal oxide layer including one or more sub-stoichiometric regions. The metal oxide layer includes one or more metal-oxides deposited conformally using a mixed precursor atomic layer deposition process. A graded oxygen profile in the metal oxide layer(s) of the stack including a mirrored impurity density may be formed wherein the sub-stoichiometric region(s) include a relatively high density of impurities obtained as reaction by-products. Arrays of cell structures can be formed with no requirement for a thick active electrode, allowing for more space for a metal fill and optional selector, thereby reducing access resistance.

Laterally switching cell having sub-stoichiometric metal oxide active layer

A gate structure for effective work function adjustments of semiconductor devices that includes a gate dielectric on a channel region of a semiconductor device; a first metal nitride in direct contact with the gate dielectric; a conformal carbide of Aluminum material layer having an aluminum content greater than 30 atomic wt. %; and a second metal nitride layer in direct contact with the conformal aluminum (Al) and carbon (C) containing material layer. The conformal carbide of aluminum (Al) layer includes aluminum carbide, or AlC, yielding an aluminum (Al) content up to 57 atomic % (at. %) and work function setting from 3.9 eV to 5.0 eV at thicknesses below 25 &#x212b;. Such structures can present metal gate length scaling and resistance benefit below 25 nm compared to state of the art work function electrodes.

Conformal replacement gate electrode for short channel devices

A thin film formation method includes setting a film formation subject to 200&#xb0; C. or higher. A first step includes changing a first state, in which a film formation material and a carrier gas are supplied so that the film formation material collects on the film formation subject, to a second state, in which the film formation material is omitted. A second step includes changing a third state, in which a hydrogen gas and a carrier gas are supplied to reduce the film formation material, to a fourth state, in which the hydrogen gas is omitted. The film formation material is any one of Al(CH), Al(CH)H, and Al(CH)Cl. The first step and the second step are alternately repeated to form an aluminum carbide film on the film formation subject such that a content rate of aluminum atoms is 20 atomic percent or greater.

Thin film formation method

A method of forming a semiconductor device that includes forming a metal oxide material on a III-V semiconductor channel region or a germanium containing channel region; and treating the metal oxide material with an oxidation process. The method may further include depositing of a hafnium containing oxide on the metal oxide material after the oxidation process, and forming a gate conductor atop the hafnium containing oxide. The source and drain regions are on present on opposing sides of the gate structure including the metal oxide material, the hafnium containing oxide and the gate conductor.

Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device

A neuromorphic device includes a metal-oxide channel layer that has a variable-resistance between a first terminal and a second terminal. The neuromorphic device further includes a metal-oxide charge transfer layer over the metal-oxide channel layer that causes the metal-oxide channel layer to vary in resistance based on charge exchange between the metal-oxide charge transfer layer and the metal-oxide channel layer in accordance with an applied input signal. The neuromorphic device further includes a third terminal that applies the signal to the metal-oxide charge transfer layer and the metal-oxide channel layer.

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Hastings on Hudson, NY, United States of America

John Rozen