Lsi Logic Corporation

Other

John Rongxiang Hu

Philippe Schoenborn

Ana Ley

Wei-Jen Hsia

Valeriy K Sukharev

Kai Zhang

Hong-Qiang Lu

Senthil Arthanari

Linggian Qian

Yi-Je Lim

Warren Uesato

A system comprises a platform being configured for locomotion in a plurality of directions over a surface. A robotic unit is configured for dexterous manipulation comprising at least lifting of objects. The robotic unit is joined to the platform. At least one extender unit is joined to the platform and is configured for controlled extension beyond the platform to contact the surface to stabilize the system at least during the manipulation by the robotic unit. At least one controlling unit is configured to be operable for at least determining a center of gravity and a zero moment point for the system and for at least controlling an extension of the extender unit.

System for stabilization control of mobile robotics

A carbon-doped hard mask includes a dielectric material containing carbon which is released from the hard mask during a metal etching process. The released carbon is deposited on and bonds to sidewalls of the metal structure during the metal etching process to passivate the sidewalls of the metal structure and prevent lateral etching of the sidewalls during the metal etching process. The released carbon also prevents accumulation of metal residue in open fields.

Carbon-doped hard mask and method of passivating structures during semiconductor device fabrication

Protective caps are formed over horizontally closely spaced apart metal lines of an integrated circuit structure. Low k silicon oxide dielectric material is then deposited over and between the metal lines and over protective caps on the lines. After the formation of such low k material between the lines and over the caps, standard k dielectric material is deposited over the low k layer as a planarizing layer over low portions of the low k layer between the lines which may be lower than the top of the caps on the lines to prevent further etching or dishing of the low k layer of during planarizing. The structure is then planarized to bring the low k dielectric material down to the tops of the protective caps on the metal lines. A layer of standard k silicon material is then formed over the planarized low k layer and the caps to allow via formation without passing through the low k layer to avoid via poisoning.

Processing for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines

A process is provided for removing resist mask material from a protective barrier layer formed over a layer of low k silicon oxide dielectric material of an integrated circuit structure without damaging the low k dielectric material, and without the necessity of subjecting the exposed via sidewalls of the low k dielectric material to either a pretreatment to inhibit subsequent damage to the low k dielectric material during the resist removal, or a post treatment to repair damage to the low k material after the resist removal. The resist removal process comprises exposing the resist mask material to a hydrogen plasma formed from a source of hydrogen such as ammonia, while maintaining the temperature below about 40&deg; C. to inhibit attack of the low k silicon oxide dielectric material by oxygen released from the decomposition of the resist material.

Process for removing resist mask of integrated circuit structure which mitigates damage to underlying low dielectric constant silicon oxide dielectric layer

A method for treating exposed surfaces of a low k carbon doped silicon oxide dielectric material in order to protect the low k carbon doped silicon oxide dielectric material from damage during removal of photoresist mask materials is described. The process comprises (a) first treating the exposed surfaces of a low k carbon doped silicon oxide dielectric material with a plasma capable of forming a densified layer on and adjacent the exposed surfaces of low k carbon doped silicon oxide dielectric material and (b) then treating the semiconductor wafer with a mild oxidizing agent capable of removing photoresist materials from the semiconductor wafer. These steps will prevent the degradation of the exposed surfaces of a low k carbon doped silicon oxide dielectric material during removal of an etch mask after formation of vias or contact openings in the low k carbon doped silicon oxide dielectric material.

Growing community of inventors

San Jose, CA, United States of America

John Rongxiang Hu