Sri International

Sarnoff Corporation

John Robertson Tower

Peter Alan Levine

Rui Zhu

Nathaniel Joseph McCaffrey

Michael Raymond Piacentino

Robert Michael Guidash

Taner Dosluoglu

Peter Jeffrey Burt

Sek Meng Chai

Thomas Lee Vogelsong

David Alan Ackerman

Michael Anthony Isnardi

Pradyumna Kumar Swain

Gooitzen Siemen Van Der Wal

Gooitzen Sieman Van Der Wal

David Chao Zhang

Francis Paul Pantuso

Thomas Richard Senko

James Tynan Andrews

Modules and control units cooperate to simultaneously and independently control and adjust pixel parameters non-uniformly at regional increments across an entire image captured in an image frame by pixels in a pixel array. Pixel parameter changes for pixels in a given region occur, based on i) a contextual understanding of what contextually was happening in the one or more prior image frames and ii) whether salient items are located within that region. Additionally, guidance is sent to the sensor control unit to i) increase or decrease pixel parameters within those regions with salient items and then either to i) maintain, ii) increase or iii) decrease pixel parameters within regions without salient items in order to stay within any i) bandwidth limitations ii) memory storage, and/or iii) power consumptions limitations imposed by 1) one or more image sensors or 2) the communication loop between the sensor control unit and the image processing unit.

Methods for enhanced imaging based on semantic processing and dynamic scene modeling

Systems, Methods, and Apparatuses for an image sensor and a control system to cooperate with each photodiode in individual pixels to allow multiple pixels in a set of pixels to operate in a different imaging-mode of operation simultaneously within multiple window regions of the image. The image sensor has multiple window regions each capable of operating in different operating modes. Each pixel contains multiple photodiodes. The imager is fabricated with an additional semiconductor layer containing one or more metallization layers for interconnections and providing active CMOS circuits for control.

Multiple window, multiple mode image sensor

An imaging system for capturing light over a wide dynamic range and method for operating the same are provided. In some aspects, the method includes positioning an imaging pixel to image a scene described by light signals that extend over a wide dynamic range, and selecting a different integration time for at least two photodiodes in the imaging pixel based on light signals received by the imaging pixel, wherein the photodiodes are coupled to a sense node, and each photodiode is controlled using a different transfer gate. The method also includes performing a readout of the imaging pixel using a readout circuit connected to the sense node, wherein a capacitance associated with the sense node is modified during the readout of the at least two photodiodes.

Extended dynamic range imaging sensor and operating mode of the same

An imager has an array of pixels arranged in rows and columns, readout circuitry electrically coupled to the columns to receive signals from the pixels, the readout circuitry having at least one signal path with gain switching, and a threshold detector electrically coupled to the readout circuitry to set a gain to be applied by the readout circuitry.

Low power wide dynamic range CMOS imager output circuit having a threshold detector to set a gain to be applied by a readout circuitry

A method and apparatus for optimizing image quality based on scene content comprising a sensor for generating a sequence of frames where each frame in the sequence of frames comprises content representing a scene and a digital processor, coupled to the sensor, for performing scene content analysis and for establishing a window defining a number of input frames from the sensor and processed output frames, and for aligning and combining the number of frames in the window to form an output frame, wherein sensor parameters and frame combination parameters are adjusted based on scene content.

Method and apparatus for optimizing image quality based on scene content

The present invention provides a method and a system for high performance image signal processing of continuous images in real time. The system comprising a focal plane array for generating continuous source image frames in real time. The focal plane array divided logically into blocks of sub-frames. The system also comprising an analog to digital converter (ADC) layer having an array of ADC elements for converting the source image frames into a digital data. The system further comprising a digital processor layer having an array of processing elements for processing the digital data and an interconnecting layer for connecting each one of the ADC elements and the digital processing elements substantially vertically to the focal plane and substantially parallel to one another. The processing comprising reducing image motion blur, increasing image dynamic range, increasing image depth of field and obtaining features of the images.

System and method for high performance image processing

A pixel design is disclosed. The pixel includes a photo-sensitive element. A first reflective layer substantially overlies the photo-sensitive element. A second reflective layer substantially underlies the photo-sensitive element and forms a cavity with the first reflective layer that is non-resonant with respect to photon absorption. An aperture is formed in either the first reflective layer or the second reflective layer. When electromagnetic radiation enters the aperture, the first reflective layer and the second reflective layer are configured to reflect the electromagnetic radiation substantially toward each other until substantially absorbed in the cavity.

Night vision CMOS imager with optical pixel cavity

A non-linear conversion capability within an on-chip, per-column analog-to-digital converter (ADC) is provided to expand a compressed analog signal such that the resulting digital output that has a predetermined (linear or non-linear) mapping with respect to input brightness level of an incoming light signal to a row of pixels. The predetermined mapping may also be provided by a non-linear amplifier coupled to a linear or non-linear ADC and a resulting compressed non-linear digital representation at the output of the ADC is substantially linearized by an on-chip or an off-chip look-up table (LUT).

CMOS imager with companded column signals

A method and apparatus for equalizing gain in an array of electron multiplication (EM) pixels is disclosed, each pixel having one or more impact ionization gain stages with implants to achieve charge transfer directionality and comprising a phase 1 clocked gate, an EM clocked gate, and two DC gates formed between the phase 1 clocked gate and the EM clocked gate, comprising the steps of (a) applying initial voltages to each of the DC gates and the EM clocked gates of at least two pixels of a plurality of pixels; (b) clocking phase 1 clock gates and an EM clock gates associated with the at least two pixels of the plurality of pixels a predetermined number of times to achieve an average pixel intensity value after impact ionization gain; and (c) selectively adjusting the difference in voltage between the DC gate and corresponding EM clocked gate of the at least two pixels of the plurality of pixels until the difference between the resulting pixel intensity values and the average pixel intensity value needed to produce a desired uniform gain image is below a predetermined threshold.

Gain matching for electron multiplication imager

A pixel for an imager is disclosed that includes at least one electron multiplication (EM) gain stage configured in a loop and electrically coupled to a charge collection region and a charge readout region, the charge collection region being configured to generate a charge packet, the EM gain stage being configured to amplify the charge packet by impact ionization and to circulate the charge packet a predetermined number of times in one direction around the loop, the charge readout region being configured to receive the amplified charge packet and convert the amplified charge to a measurable signal. The at least one EM gain stage, the charge collection region, and the charge readout region can be formed monolithically in an integrated circuit. The pixel can be manufactured using a CMOS process. The pixel can further include a second EM gain stage formed in the integrated circuit to increase the amount of amplification around the loop.

Electron multiplication CMOS imager

Methods and apparatus for imaging light are disclosed. Light is imaged by collecting light, converting the collected light into a electrical charge signal, multiplying the electrical charge signal to produce multiple electrical charge signals with associated levels of gain, converting the electrical charge signals to voltage signals, and developing an output signal from one or more of the voltage signals that represents the collected light. The electrical charge signal may be multiplied using an electron multiplication device associated with multiple taps to produce the electrical charge signal with different levels of gain.

Imaging methods and apparatus having extended dynamic range

An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process. Each pixel is formed of at least one charge well of minority carriers and a gate oxide layer overlaying the at least one charge well. At least two spaced gate electrodes corresponding in position to the at least two charge wells overlays the gate oxide layer. The space between adjacent electrodes defines a gap to transfer charge between adjacent ones of at the least two spaced gate electrodes and the gap is stabilized. A back-illuminated imager is also described in which photocarriers are diverted from devices integrated with the pixel by a PN junction formed in the pixel structure.

CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture

A method and apparatus for resolving relative times-of-arrival of a plurality of light pulses includes a plurality of drift-field detectors. Each drift-field detector includes a light sensor and a semiconductor drift region. Each light sensor generates an electrical charge from at least one of the plurality of light pulses. Each semiconductor drift region receives the electrical charge from its respective light sensor and, pursuant to an electric field therein, produces a spatial charge distribution. The spatial charge distribution for each of the semiconductor drift regions is stored in an analog storage device associated therewith. The relative positions of the charge distributions in the semiconductor drift regions are used to calculate the relative times-of-arrival of the light pulses.

Method and apparatus for resolving relative times-of-arrival of light pulses

A method and apparatus for low light imaging in which a plurality of relatively small detectors forming a line is coupled to a respective cell of a CCD register. A charge indicative of detected image information is provided to the respective cells after the cells are substantially discharged via a drain. The register is read by a control element to define therefrom a row of pixel information.

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Yardley, PA, United States of America

John Robertson Tower