Rf Micro Devices, Inc.

Qorvo Us, Inc.

John Robert Siomkos

Jayanti Jaganatha Rao

Merrill Albert Hatcher, Jr

Mark Alan Crandall

Marcus Granger-Jones

Christopher Truong Ngo

Milind Shah

Thomas Scott Morris

Edward T Spears

Ulrik Riis Madsen

Dan Carey

Brian D Sawyer

Jeppe Korshøj Bendixen

John Avery Capwell

Carl Hinshaw

Mark Crandall

The present disclosure relates to a double-sided integrated circuit (IC) module, which includes an exposed semiconductor die on a bottom side. A double-sided IC module includes a module substrate with a top side and a bottom side. Electronic components are mounted to each of the top side and the bottom side. Generally, the electronic components are encapsulated by a mold compound. In an exemplary aspect, a portion of the mold compound on the bottom side of the module substrate is removed, exposing a semiconductor die surface of at least one of the electronic components.

Double-sided integrated circuit module having an exposed semiconductor die

This disclosure relates generally to directional couplers. In one embodiment, a directional coupler includes a first port, a second port, a third port, a first inductive element, a second inductive element, a first switchable path, and a second switchable path. The first inductive element is coupled between the first port and the second port, while the second inductive element is mutually coupled to the first inductive element. The first switchable path is configured to be opened and closed, wherein the first switchable path is coupled between a first location of the second inductive element and the third port. The second switchable path is configured to be opened and closed, wherein the second switchable path is coupled between a second location of the second inductive element and the third port. In this manner, a directivity of the directional coupler can be switched between a forward direction and a reverse direction.

Reconfigurable directional coupler

Acoustic wave devices and methods of coating a protective film of alumina (AlO) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.

Atomic layer deposition encapsulation for acoustic wave devices

An architecture for a radio frequency (RF) front-end is disclosed. The architecture for the RF front-end includes a circuit module that includes a plurality of dies partitioned on the circuit module. A plurality of filter banks with individual ones of the plurality of filter banks disposed on each of the plurality of circuit dies is also included. Further included is a plurality of switches having individual ones of the plurality of switches coupled to corresponding ones of the plurality of filter banks and in at least one embodiment a control system is configured to open and close selected ones of the plurality of switches.

Architecture for a radio frequency front-end

Embodiments include devices and methods for manufacturing a module having a first shielded compartment and a second shielded compartment, wherein the first shielded compartment is electrically isolated from the second shielded compartment. Electrical conductivity is controlled in a manner in which current flow between shielded circuits is directed to reduce or eliminate energy from being coupled between one or more shielded compartments on the same module. Each module may have a plurality of individual shielded compartments, where each compartment has a dedicated ground plane. The shields for each compartment may be tied to the dedicated ground plane of the compartment. Because the dedicated ground planes are not tied together, each of the shielded compartments on the modules remains isolated from all the other shielded compartments on the modules. In some embodiments having a plurality of shielded compartments, there is at least one isolated shielded compartment depending upon the design needs of the module.

Compartmentalized shielding of selected components

Power amplifiers and methods of coating a protective film of alumina (AlO) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.

Atomic layer deposition encapsulation for power amplifiers in RF circuits

The present disclosure is related to an electronic assembly in a stacked configuration. Electronic components are formed on substrates at each level of the stacked configuration. Electromagnetic shield compartments may be provided which substantially encapsulate the electronic components. Conductive vias are formed within the substrates on each level of the stacked configuration and coupled to one another so that the electromagnetic shields at each level of the stack can couple to a common node.

Growing community of inventors

Greensboro, NC, United States of America

John Robert Siomkos