General Electric Company

Trw Limited

John Robert LaGraff

James Anthony Ruud

James Claude Carnahan

James M Murduck

Hugo W-k Chan

Xiao-Dong Sun

Claire L Pettiette-Hall

Bin Wei

Lawrence Bernard Kool

Stephen Joseph Ferrigno

D Sangeeta

Warren Davis Grossklaus, Jr

Leo Spitz MacDonald

Tris Colaizzi

Michel Joseph Shaw

An electrochemical process for selectively stripping at least one coating from the surface of a substrate is disclosed. The substrate (often a turbine engine component) is immersed in a composition through which electrical current flows. The composition includes a halide salt, such as sodium chloride, ammonium chloride, and potassium chloride. In preferred embodiments, the electrical current is direct current (DC). The process is especially useful for selectively removing portions of diffusion aluminide coatings. For example, the additive layer can efficiently be removed, without substantially affecting the underlying diffusion layer or substrate. Related stripping compositions and apparatuses are also described.

Method for partially stripping a coating from the surface of a substrate, and related articles and compositions

A method for selectively removing one or more coatings from the surface of a substrate is described. The coating is treated with an aqueous composition which includes an acid of the formula H AF , or precursors to such an acid. In that formula, A is Si, Ge, Ti, Zr, Al, and Ga; and x is 1-6. The acid is often H SiF . The composition may sometimes include at least one additional acid, such as phosphoric acid. The coating being removed is often an aluminide coating or an MCrAl(X)-type material. The substrate is usually a polymer or a metal, such as a superalloy.

Method for removing a coating from a substrate, and related compositions

A fluorescent probe is applied to bind to a metal oxide on a substrate and the substrate is exposed to an ultraviolet light to identify the metal oxide. A chemical cleaning or stripping solution is selected by combinatorial high throughput screening (CHTS). In the method, an array of regions is defined on a substrate, a candidate cleaning/stripping solution is deposited onto the regions to effect cleaning/stripping of the regions; a fluorescent probe is applied to bind to a metal oxide on the substrate; the substrate is exposed to an ultraviolet light to identify the metal oxide and a product of the cleaning/stripping is evaluated according to the identified metal oxide. An activated metal substrate composition is provided that comprises a metal substrate with a contaminant metal oxide coating and a fluorescent activator bound to the substrate by reaction with the metal oxide coating.

Fluorescent labeling method and substrate

A liquid chemical stripping or cleaning solution is selected by combinatorial high throughput screening. A high throughput screening well array assembly includes (A) a metal substrate and (B) a mask that defines an array of wells on the substrate. A combinatorial high throughput screening system includes (A) a metal substrate and (B) a mask that defines an array of wells on the substrate and a reaction vessel to receive the well array assembly.

High throughput screening method, array assembly and system

An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized. The passivation layer is preferably a dielectric material having a crystal lattice structure which is compatible to that of the oxide superconducting layer. The method is especially efficient for the fabrication of devices with multiple layers of oxide superconductive materials because it does not degrade the epitaxial template's crystalline structure.

Implant-patterned superconductive device and a method for indirect ion implantation of superconductive films

A SNS Josephson junction (,) is provided for use in a superconducting integrated circuit. The SNS junction (,) includes a first high temperature superconducting (HTS) layer (,) deposited and patterned on a substrate (,), such that the first HTS layer (,) is selectively removed to expose a top surface of the substrate (,) as well as to form an angular side surface (,) on the first HTS layer (,) adjacent to the exposed top surface of the substrate (,). Ion implantation is used to form a junction region (,) having non-superconducting properties along the angular side surface (,) of the first HTS layer (,). A second HTS layer (,) is then deposited and patterned over at least a portion of the first HTS layer (,) and the exposed top surface of the substrate (,), thereby forming a SNS Josephson junction.

Using ion implantation to create normal layers in superconducting-normal-superconducting Josephson junctions

Method for indirect Ion implantation of oxide superconductive films

Growing community of inventors

Niskayuna, NY, United States of America

John Robert LaGraff