Kabushiki Kaisha Toshiba

Sony Corporation

John Rennie

Genichi Hatakoshi

Shinji Saito

Masayuki Ishikawa

Hidetoshi Fujimoto

Masaaki Onomura

Masahiro Yamamoto

Mariko Suzuki

Hideto Sugawara

Yukie Nishikawa

Shinya Nunoue

Kazuhiko Itaya

Yoshihiro Kokubun

Lisa Sugiura

Johji Nishio

Atsushi Toda

Keiji Tatani

Hiroaki Yoshida

Koichi Nitta

Masaki Okajima

Susumu Inoue

Atsushi Kamata

Peter James Parbrook

A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed. Quantum dots having substantially equal diameters are formed in the optical filter layer. The quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded.

Solid-state imaging device

The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric deviceaccording to the present invention is constructed by depositing compound-semiconductor layersandon a monocrystalline substrateof a hexagonal close-packed structure. The shape of the monocrystalline substrateis a parallelogram. Individual sides of the parallelogram are parallel to a &#x3c;11-20&#x3e; orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layerand p-type GaN layermay be used.

Semiconductor optoelectric device and method of manufacturing the same

A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and an inner-layer lens. Each of the plurality of arrayed pixels includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is configured to block infrared light and faces a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels. The inner-layer lens is formed below the optical inner filter layer.

Solid-state imaging device, method of manufacturing the same, and camera

A solid-state imaging device includes: an avalanche photodiode having a structure including an nregion, a pregion, and an avalanche region interposed between the nregion and the pregion, all of which are formed to extend in a thickness direction of a semiconductor base; and a pixel repeatedly having the structure of the avalanche photodiode.

Solid-state imaging device having pixels including avalanche photodiodes

A solid-state imaging device is provided. The solid-state imaging device includes a substrate having a light sensing part for each of pixels; and one or more rod members made of a light transmissive material above the light sensing part for each of the pixels.

Solid-state imaging device and manufacturing method thereof and electronic apparatus and manufacturing method thereof

A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate in the order an n-type GaN contact layer, an n-type GaAlN cladding layer , an MQW active layer , a p-type GaAlN cladding layer , wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer and a light confining layer formed in a region except the ridge portion of the cladding layer on the double heterostructure, wherein a refractive index of the light confining layer is larger than that of a p-type GaAlN cladding layer.

Semiconductor laser and method of fabricating same

In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dry etching, insufficient current injection, and the need for a high current density, a nitride compound semiconductor light emitting device has current blocking layers made of n-type B,In,Al,Ga,N (0&lE;x&lE;1, 0&lE;y&lE;1, 0&lE;z&lE;1) single crystal containing an oxide of a predetermined metal, carbon and impurities exhibiting p-type and n-type conductivity, or i-type B,In,Al,Ga,N (0&lE;x&lE;1, 0&lE;y&lE;1, 0&lE;z&lE;1) single crystal in which carriers are inactivated by hydrogen or oxygen to realize an internal current blocking structure without the need for dry etching. By applying a reverse bias voltage, the semiconductor can be activated only along a current path, and the remainder region is utilized as a current blocking layer. When the n-side electrode has a unique three-layered structure, a reduction in contact resistance and good wire bonding are promised.

Nitride compound semiconductor light emitting device

The present invention provides a nitride system semiconductor device which decreases in cost and improves productivity without heat treatment after the growth and which increases lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type In,Ga,Al,B,N,P,As,(0&lE;x, 0&lE;y 0&lE;z, 0&lE;x&plus;y&plus;z&lE;1, 0<m, 0&lE;n, 0<m&plus;n&lE;1) layer, a p-type In,Ga,Al,B,N,P,As,(0&lE;x, 0&lE;y, 0&lE;z, 0&lE;x&plus;y&plus;z&lE;1, 0<m, 0<n, 0<m&plus;n&lE;1) layer, and an electrode,formed on a substrate. The oxygen concentration of the surface of the p-type In,Ga,Al,B,N,P,As,layer is 5&times;10,cm,or lower.

Nitride system semiconductor device and method for manufacturing the same

At an n--n hetero-interface in a GaN-based or ZnSe-based multilayered semiconductor laser and light-emitting diode, an excessive voltage drop causing the operating voltage to increased is reduced, thereby lengthening the service life of the device. A single or plurality of n-type intermediate layers are provided in the n--n hetero-interface region where the excessive voltage drop develops. The excessive voltage drop developing at the n--n hetero-interface is decreased by setting the energy value at the edge of the conduction band of each intermediate layer to a mid-value between the energy values at the edges of the conduction bands of the n-type compound semiconductors adjoining both sides of the intermediate layer. The configuration of a GaN-based MQW laser including the intermediate layer formed on sapphire substrate is shown. The relationship between the lattice constant of an intermediate layer necessary for obtaining an intermediate layer excellent in crystallinity suitable for the above object and the lattice constants of compound semiconductors adjoining both sides of the intermediate layer is described.

Multi-layer structured nitride-based semiconductor devices

The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a &lt;11-20&gt; orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

According to the present invention, a high-efficiency and high reliability GaN-based semiconductor light emitting device having uniform light emission from the active layer, can be obtained by suppressing the defect density of the interface between the guide layer and cladding layer. When manufacturing the GaN-based semiconductor light emitting device, the growth temperature and pressure are increased, or the carrier gas flow rate and ammonia flow rate necessary for efficiently growing p-GaAlN are increased, in the vicinity of the interface between the upper p-GaN guide layer and p-AlGaN cladding layer in particular, and thus a method and structure, capable of suppressing these high defect densities generated, can be provided. By selecting appropriate conditions, namely whether the increment in the temperature and pressure, and the increment in the flow rates of the carrier gas and ammonia should be carried out during the growth of the cladding layer or after, or they should be carried out at the same time or independently, or by inserting an InAlGaN or InGaN buffering layer for preventing the generation of defects, between the waveguide layer and cladding layer, the defect densities can be very much decreased.

Semiconductor light emitting device and method of manufacturing the same

A thin oxide region is introduced to a surface of a GaN layer prior to contact meal evaporation by carefully controlling the oxidation of the surface. This results in the normally present surface states to be smothered and thus a low band offset is observed in an ohmic contact comprising the contact metal and the GaN layer. The thickness of the oxide region preferably is about 8 .ANG. to 25 .ANG.. Other elements such as S, Se, Te, As, P and Hf can be used as an alternative to O. Devices using the thin region in the ohmic contact may include semiconductor laser devices, light emitting diodes, and III-V based transistors.

Semiconductor device having a GaNO region intermediate a GaN-based

A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

A wedge-like etching groove is formed so that stresses can be collected along a cleavage surface of a nitride based compound semiconductor, and end portions are separated from a substrate. With these operations, a light-emitting layer can form an excellent mirror by a natural cleavage. Further, by separating a portion of the end surfaces from the substrate, it is possible to suppress a deformation from the substrate and therefore, a deterioration due to the deformation can be prevented. Therefore, it is possible to provide a nitride based compound semiconductor light-emitting device which can form an excellent cleavage surface with a simple process.

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Tokyo, Japan

John Rennie