Applied Materials, Inc.

Advanced Energy Industries, Inc.

Fourth State Technology, Inc.

John R Swyers

Terry R Turner

James D Spain

Michael Johnson

Tony Davis

Manjunath Yedatore

Donn Turner

A server receives equipment data from third party support equipment during operation of the third party support equipment in a manufacturing environment. The server receives the equipment data via a first port on the third party support equipment. The third party support equipment communicates with a process tool via a second port on third party support equipment. The server determines a future state of the third party support equipment based on the equipment data and notifies a user of the future state of the third party support equipment.

Predictive maintenance for third party support equipment

A plasma monitoring and control method and system monitor and control plasma in an electronic device fabrication reactor by sensing the voltage of the radio frequency power that is directed into the plasma producing gas at the input to the plasma producing environment of the electronic device fabrication reactor. The method and system further sense the current and phase angle of the radio frequency power directed to the plasma producing gas at the input to the plasma producing environment. Full load impedance is measured and used in determining characteristics of the plasma environment, including not only discharge and sheath impedances, but also chuck and wafer impedances, primary ground path impedance, and a secondary ground path impedance associated with the plasma environment. This permits end point detection of both deposition and etch processes, as well as advanced process control for electronic device fabrication. The invention also provides automatic gain control features for applying necessary signal gain control functions during the end point and advanced process control operations.

Plasma monitoring and control method and system

A plasma monitoring and control method and system monitor and control plasma in an electronic device fabrication reactor by sensing the voltage of the radio frequency power that is directed into the plasma producing gas at the input to the plasma producing environment of the electronic device fabrication reactor. The method and system further senses the current and phase angle of the radio frequency power directed to the plasma producing gas at the input to the plasma producing environment. Full load impedance is measured and used in determining characteristics of the plasma environment, including not only discharge and sheath impedances, but also chuck and wafer impedances, primary ground path impedance, and a secondary ground path impedance associated with the plasma environment. This permits end point detection of both deposition and etch processes, as well as advanced process control for electronic device fabrication. The invention also provides automatic gain control features for applying necessary signal gain control functions during the end point and advanced process control operations.

Growing community of inventors

Austin, TX, United States of America

John R Swyers