Auriga Measurement Systems, LLC

Bae Systems Information and Electronic Systems Integration Inc.

John R Muir

Yusuke Tajima

Robert Actis

Eldon M Sutphin

Cheryl V Liss

Robert J Lender, Jr

Jared P Majcher

Robert C Marion

Edwin C Powers

Steven Rajkowski

Frank A Mannarino

Qin Shen-Schultz

Robert J Lender

A system and method for using an embedded microprocessor in an RF amplifier. The use of an embedded microprocessor avoids manual calibration. The Microprocessor collects initial amplifier performance data based on a set of parameters and calculates the needed corrections. The microprocessor can change levels within the circuit to achieve those operating points. The embedded microprocessor sets voltage levels with internal circuitry and communicates this information externally through a serial communication port, or the like, to allow a user to communicate with and look at the amplifier data and readjust the internal bias levels, as needed. Thus, the internal microprocessor provides for calibration, self-testing, and monitoring of the RF amplifier and also functions as an in situ bias and temperature compensation controller for use in the presence of temperature variation and provides bias sequencing control to protect against improper applied timing of voltage inputs to the amplifier.

Low swap circuit card design for RF power amplifiers

A solid-state amplifier architecture is disclosed. In some embodiments, the disclosed architecture may include first and second channel chipsets configured to amplify either the entire instantaneous frequency band of a radio frequency (RF) input signal or, respectively, sub-bands thereof, which may be divided proportionally between the two chipsets. In some cases, the chipsets may be configured to amplify frequencies in excess of the entire K-band and K-band frequencies simultaneously. In some cases, the architecture may be configured to address a signal received, for instance, from an electronic warfare (EW) system to a log amplifier stage configured to output a signal to the EW system, in response to which the EW system may generate a RF signal for amplification by the architecture for transmission. To facilitate heat dissipation, the architecture may be coupled, in part or in whole, with a thermally conductive carrier, optionally with an intervening diamond heat spreader layer.

High power radio frequency amplifier architecture

Circuits and techniques to linearize the operation of an RF power amplifier are described. A linearizer circuit may include a non-amplification signal path which includes a delay line and an amplification signal path which includes at least one amplifier stage. In some embodiments, the amplification signal path may include an odd number of amplification stages. The linearizer may be used to precondition an input signal of an RF power amplifier in a manner that improves the overall linearity of operation.

Linearization circuit and related techniques

An RF circuit includes a balun circuit comprised of a coaxial cable having a desired characteristic impedance and having a first port coupled to a first port of said RF circuit and a second port and a transformer circuit having a first port coupled to the second port of the balun. The transformer circuit is comprised of a pair of coaxial cables, each having a desired characteristic impedance and each having a ferrite coupled thereto. The interconnects between center conductors and outer conductors in the transformer are made symmetrical such that a resonance with a frequency determined by the inductance and capacitance of the coaxial cables does not occur, preventing any nulls in an insertion loss characteristic of the RF circuit. The ferrite is selected to act as a circuit element having an impedance characteristic which is higher than the impedance characteristic of the coaxial cable.

High frequency coaxial balun and transformer

An amplifier circuit includes a pair of amplifying devices, a first balun coupled between an input port of the amplifier circuit and RF input ports of the pair of amplifying devices and a second balun coupled between RF output ports of the pair of amplifying devices and an output port of the amplifier circuit wherein the first and second baluns are configured such that the amplifier circuit operates under open condition for signals at a second harmonic frequency even when the second harmonic frequency is within an operating frequency band of a fundamental frequency of the amplifier circuit. In one embodiment, the amplifier circuit includes a bypass circuit which selectively couples balun ports to ground such that in response to a first control signal, the amplifier circuit operates in an amplifying mode and in response to a second control signal, the amplifier circuit operates in a bypass mode.

Amplifier circuit

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North Chelmsford, MA, United States of America

John R Muir