Honeywell G.m.b.h.

Alliant Techsystems Inc.

Northrop Grumman Systems Corporation

Orbital Atk, Inc.

John R Lamberg

Michael J Gawronski

Christopher Coy Fuller

Rebecca A Hart

John J Geddes

Robert A Sainati

Donald R Singh

Michael J Balk

David Nohre

Philip Cheung

Jared Wall

Matthew P Contons

Joseph E Ferris

Steven L Palmquist

A body spin detection device for a projectile, the device including a perturbing element and a detection element electrically connected to detection circuitry in the projectile. The detection circuitry configured to receive, via the detection element, a first and second input signals and determine that the first input signal is different from the second input signal based on signal characteristics for the first and second input signals. The detection circuitry is further configured to determine a spin rate for at least one of the despun control portion and the chassis by determining a time period between receiving the first input signal and the second input signal.

Detecting body spin on a projectile

Composite material, devices incorporating the composite material and methods of forming the composite material are provided. The composite material includes interstitial material that has at least one of a select relative permittivity property value and a select relative permeability property value. The composite material further includes inclusion material within the interstitial material. The inclusion material has at least one of a select relative permeability property value and a select relative permittivity property value. The select relative permeability and permittivity property values of the interstitial and the inclusion materials are selected so that the effective intrinsic impedance of the interstitial material and the inclusion material match the intrinsic impedance of air. Devices made from the composite include metamaterial and/or metamaterial-inspired (e.g., near-field LC-type parasitic) substrates and/or lenses, front-end protection, stealth absorbers, filters and mixers. Beyond the intrinsic, applications include miniature antennas and antenna arrays, directed energy weapons, EMI filters, RF and optical circuit components, among others.

Composites for antennas and other applications

Composite material, devices incorporating the composite material and methods of forming the composite material are provided. The composite material includes interstitial material that has at least one of a select relative permittivity property value and a select relative permeability property value. The composite material further includes inclusion material within the interstitial material. The inclusion material has at least one of a select relative permeability property value and a select relative permittivity property value. The select relative permeability and permittivity property values of the interstitial and the inclusion materials are selected so that the effective intrinsic impedance of the interstitial and the inclusion material match the intrinsic impedance of air. Devices made from the composite include metamaterial and/or metamaterial-inspired (e.g. near-field LC-type parasitic) substrates and/or lenses, front-end protection, stealth absorbers, filters and mixers. Beyond the intrinsic, applications include miniature antenna and antenna arrays, directed energy weapons, EMI filters, RF and optical circuit components, among others.

A radar system includes at least one transmit array comprising a plurality of metamaterial elements. The radar system further includes at least one near-field stimulator for inputting electromagnetic signal to the transmit array so that a sub-wavelength target is illuminated with an electromagnetic wave.

Resolution radar using metamaterials

An antenna array includes at least one transmit array comprising a plurality of metamaterial elements. The antenna array further includes at least one near-field stimulator for inputting electromagnetic signal to the transmit array so that a sub-wavelength target is illuminated with an electromagnetic wave.

Resolution antenna array using metamaterials

A millimeter wave microstrip shunt-mounted PIN diode switch having its DC ground separate from RF ground is created by utilizing a fan structure (radial stub) having a radius of approximately one-quarter wavelength to provide an RF ground at that location and then coupling the DC bias supplies to that RF ground location. By doing so and by proper attention to known design practices for laying out microstrip circuitry, the need for blocking capacitors required by prior art arrangements is eliminated.

Millimeter wave microstrip shunt-mounted pin diode switch with

A millimeter wave microstrip oscillator utilizing either a pulsed or CW IMPATT diode as the active element provides relatively high power output not available with a GUNN diode. The circuit comprises a block of a conductive metal having a channel of rectangular cross-section formed therein and including a cylindrical well formed inwardly in the block from the floor of the channel. A packaged IMPATT diode of either the pulsed or CW variety fits into the well with the cap portion of the package coplanar with the microstrip circuit pattern when the microstrip rests on the floor of the channel. The pattern includes a shunt open circuit stub and an impedance transformer connected to the terminals of the IMPATT diode for effectively matching the diode's complex impedance with the load. A conductive cover is secured to the block and a laterally and vertically movable tuning screw passes through the cover for fine tuning the oscillator's output frequency and power. The circuit is capable of producing CW or pulsed signals with appropriate choice of IMPATT diode bias signal (pulsed or DC), microstrip circuit pattern dimensions and tuning screw diameter and position.

Millimeter wave microstrip IMPATT diode oscillator

A voltage-controlled oscillator (VCO) especially designed for use in the millimeter wave frequency band (Ka-band) and which exhibits an adjustable tuning sensitivity. A low tuning sensitivity is easily obtained, making it suitable for narrow-band FMCW applications. It comprises a Gunn diode as a negative resistance device and a voltage variable capacitance diode (varactor) as a tuning element. A fixed capacitance element is coupled in RF series with the varactor and microstrip transmission lines are configured to function as impedance matching, resonating and filtering elements. By incorporating the fixed capacitance in RF series with the varactor, the tuning sensitivity, measured in volts/Hz is markedly reduced. The VCO uses a novel RF structure which puts the fixed capacitance in RF series with the varactor, without introducing the fixed capacitance element in the varactor bias circuitry.

Millimeter wave microstrip voltage-controlled oscillator with adjustable

A side-launch transition for efficiently joining a coaxial transmission line or coaxial connector to a microstrip transmission line for operation at millimeter wave frequencies. The microstrip transmission line comprises a conductive microstrip pattern on one side of a dielectric substrate and a ground plane on the other. The conductive microstrip pattern includes a rectangular terminal pad area of a predetermined length designed to be approximately equal to the wavelength of the signal being transmitted. This pad area is integrally joined to the microstrip line. A circular iris or aperture, is formed through the ground plane and is in a centered alignment with the terminal pad on the opposite side of the substrate. A small hole extends through the center of the iris and penetrates the substrate as well as the conductive pad area. The outer shield conductor of the coaxial transmission line or the coaxial connector and the dielectric material insulating it from its center conductor are stripped back to expose a predetermined length of center conductor which is then fitted through the small hole from the ground plane side of the substrate and soldered to the conductive pad. The outer shield is likewise soldered or otherwise conductively bonded to the ground plane in the vicinity of the iris aperture.

Millimeter wave microstrip to coaxial line side-launch transition

Disclosed is a circuit for power combining electromagnetic energy in the millimicrowave frequency band where the electromagnetic energy is produced by two substantially identical varactor tuned microstrip oscillators where the power combining circuit has less than perfect isolation properties allowing a fraction of the output of one to be fed back to the other so that the two become locked in frequency.

Mutually injection locked millimeter wave voltage controlled oscillators

A microstrip attenuator comprising a block of lossy material which is preferably impregnated with ferrite particles and having a groove of a predetermined height and width dimension formed in the bottom surface thereof defining a tunnel and positionable upon a microstrip transmission line assembly, such that the microstrip element of the assembly passes through the tunnel, but is in non-contact relation with respect to the surface-mounted microstrip element. The degree of attenuation afforded by the attenuator is primarily a function of the aforementioned length and height dimension of the tunnel formed in the block of lossy material.

Millimeter wave microstrip surface mounted attenuator

An orthogonally-polarized microstrip patch radiator feed structure comprising a cavity of circular cross section, a microstrip radiation emitter including a first ground plane at the bottom of the cavity, a first non-conductive substrate overlying the first ground plane, a circular conductive transmit patch on the first substrate, and a first input line on the first substrate extending radially to the transmit patch, and a microstrip radiation receiver, including a second non-conducting substrate overlying and spaced from said first substrate, a second ground plane on the inner surface of the second substrate in the form of a first array of spaced parallel conductive bars orthogonal to the radius of the first input line, a circular receive patch on the outer surface of said second substrate in the form of a second array of spaced parallel conductive bars aligned with the bars of the first array, and a second input line of the second substrate connected to the receive patch and extending radially in a direction orthogonal to the first input line, so that the radiation from the transmit patch is emitted through the spaces between the bars of the arrays.

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Minnetonka, MN, United States of America

John R Lamberg