Westinghouse Electric Corporation

United States of America As Represented by the Secretary of the Air Force

Government of the United States of America, As Represented by the Secretary of Commerce

John R Gavaler

Robert G Charles

Aleksander I Braginski

John W Ekin

Timothy T Braggins

John J Talvacchio

Alexander I Braginski

Michael A Janocko

A superconducting film is deposited in a closed, non-baked reactor (10) containing a sputtering gas comprising O.sub.2 with H.sub.2 O vapor addition to preferably provide a total H.sub.2 O vapor pressure of between 3.times.10.sup.-3 mbar to 266.times.10.sup.-3 mbar, where a copper oxide-based target material (15) is used and the deposition substrates (16) are maintained between 550.degree. C. and 800.degree. C.

Sputtering method for forming superconductive films using water vapor

Disclosed is a superconducting Josephson junction which comprises a layer of niobium nitride on a substrate, an epitaxial layer of a pseudo-binary compound on the layer of niobium nitride, where the pseudo-binary compound has the composition about 3 atomic percent MgO--about 97 atomic percent CaO, to about 97 atomic percent MgO--about 3 atomic percent CaO, and an epitaxial layer of niobium nitride on the layer of pseudo-binary compound. Also disclosed is a method of making a Josephson junction by depositing a layer of niobium nitride onto a suitable substrate, depositing an expitaxial layer of a pseudo-binary compound onto the layer of niobium nitride, where the pseudo-binary compound has a composition of about 3 atomic percent MgO--about 97 atomic percent CaO, to about 97 atomic percent MgO--about 3 atomic percent CaO, and depositing an epitaxial layer of niobium nitride onto the layer said pseudo-binary compound.

Superconducting Josephson junctions

Method and apparatus are disclosed utilizing superconducting elements with extended strain operating range capabilities. The superconducting element is formed from a crystalline compound superconductive material that does not exhibit appreciable critical current degradation in the presence of high elastic strains imposed on the element. Such a crystalline compound superconductive material is selected from materials in the B1 and C15 crystal structure classes. The thus formed superconducting element is particularly useful in electromagnets requiring high magnetic fields for operation in the intended manner.

Method and apparatus utilizing crystalline compound superconducting

This is a method for preparing submicron-superconducting particles for use in forming a ductile superconductor wire from brittle superconducting compounds. The method utilizes preparing a mixture of solid metal halides containing essentially stoichiometric proportions of metallic components for the desired superconducting compound, co-reducing the mixture with an excess of liquid alkali metal, removing the alkali metal halide produced and the excess alkali metal from the superconducting powder, and annealing the superconducting powder to substantially remove absorbed hydrogen as indicated by the reduction of lattice parameters to essentially nominal values.

Method for the preparation of brittle superconducting material in

A sputtering technique is described in which a thin film superconductor is produced which exhibits a transition temperature in excess of the transition temperature of the bulk material. High gas pressures and low voltages are employed to produce Nb.sub.3 Ge exhibiting T.sub.c of 22.3.degree. K. The present invention was made in and during the course of work under DOD contract No. F 44-620-71-C-0045.

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Penn Hills Township, PA, United States of America

John R Gavaler