Leland Stanford Junior University

Samsung Electronics Co., Ltd.

Robert Boschgmbh

John Provine

Friedrich B Prinz

Ki-Hyun Kim

Ando Feyh

Gary Yama

Yongmin Kim

Gary O'Brien

Fabian Purkl

Shicheng Xu

Jinsung Kang

Stephen P Walch

Peter Schindler

Timothy Stephen English

Youngdong Lee

Jan Torgersen

Hyo Jin Kim

Dickson Thian

A method includes: 1) performing an atomic layer deposition cycle including (a) introducing precursors into a deposition chamber housing a substrate to deposit a material on the substrate; and (b) introducing a passivation gas into the deposition chamber to passivate a surface of the material; and 2) repeating 1) a plurality of times to form a film of the material.

Atomic layer deposition with passivation treatment

A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.

Semiconductor devices including electrically isolated patterns and method of fabricating the same

A metamaterial includes a first continuous layer formed with a first material by atomic layer deposition (ALD), a first non-continuous layer formed with a second material by ALD on first upper surface portions of a first upper surface of the first continuous layer, and a second continuous layer formed with the first material by ALD on second upper surface portions of the first upper surface of the first continuous layer and on a second upper surface of the first non-continuous layer.

Metamaterial and method for forming a metamaterial using atomic layer deposition

Growing community of inventors

Stanford, CA, United States of America

John Provine