University of Iowa Research Foundation

John P Prineas

Chris Coretsopoulos

Thomas F Boggess

Aaron Muhowski

Cassandra Bogh

Jon Olesberg

Dennis Norton

Russell J Ricker

Jonathan T Olesberg

Methods and a device for cascading broadband emission are described. An example device can comprise a substrate, a bottom contact layer above at least a portion of the substrate, and a plurality of emission regions above the bottom contact layer. The plurality of emission regions can be disposed one above another. Each of the plurality of emission regions can be configured with different respective band gaps to emit radiation of different wavelengths. The device can comprise a plurality of tunnel junctions. Each of the tunnel junctions can be disposed between at least two corresponding emission regions of the plurality of emission regions. The device can comprise a top contact layer above the plurality of emission regions.

Cascaded broadband emission

In embodiments described herein, a light emitting diode device comprises an emission device with an emission region and a bottom contact layer. The emission region comprises n cascading emission layers, where n is a whole and positive number. The n cascading emission layers comprise at least one superlattice structure. In an embodiment, a tunnel junction is spaced between a first superlattice structure and a second superlattice structure. In an embodiment, light extraction is enhanced with a trapezoidal shaped chip, a roughened exit interface, and encapsulation of the chip with a hemispherical shaped polymer. In an embodiment, the superlattice structure may be repeated periods of InAs/AlGaInSb. In another embodiment, the superlattice may be repeated periods of InAs/GaInSb/InAs/AlAsSb. In another embodiment, between the bottom contact layer and the emission region is a tunnel junction where the bottom contact layer and the tunnel junction form an n-type anode layer.

Cascaded superlattice LED system

An article of manufacture and a method of defining a photodetector element are provided. The article of manufacture includes a photodector element comprising a junction formed by a first III-V semiconductor layer having a first charge type and a second III-V semiconductor layer comprising a second dopant having a second charge type. The second III-V semiconductor layer is disposed between the first III-V semiconductor layer and a wafer. Patterned dopant regions having a third charge type, the third charge type being the same as the first charge type, are disposed in the first III-V semiconductor layer.

System and method of planar processing of semiconductors into detector arrays

Growing community of inventors

Iowa City, IA, United States of America

John P Prineas