Texas Instruments Corporation

Other

John P Long

Robert A Owen

William K Walker

Gail D Shelton

Bert T Runnels

Donald A Rogowski

James F Belcher

Steven N Frank

Jeanee Jones

A focal plane array (30) for a thermal imaging system (20). The focal plane array (30) may include a number of thermal sensitive elements (42) bounded by a border (41). The thermal sensors (40) may provide a sensor signal output representative of the thermal radiation incident to the focal plane array (30). A multi-layer common electrode (36) may be coupled to the thermal sensitive elements (42) and the border (41). An optical coating (34) sensitive to infrared radiation may be provided in communication with the common electrode (36).

Reduced stress electrode for focal plane array of thermal imaging system

A focal plane array (30) for a thermal imaging system (20). The focal plane array (30) may include a number of thermal sensitive elements (42) formed by a first series of slots (78) and a second series of slots (80). The thermal sensors (40) may be bounded by a border (41). The thermal sensors (40) may provide a sensor signal output representative of thermal radiation incident to the focal plane array (30). The first series of slots (78) may include a leading first slot (82) and a trailing first slot (84). Additionally, the first series of slots (78) may include a number of substantially parallel first slots therebetween. The second series of slots (80) may include a leading second slot (86) in a trailing second slot (88). The second series of slots (80) may also include a number of substantially parallel second slots therebetween. One of the first slots may extend beyond the leading second slot (86). Additionally, one of the first slots may extend beyond the trailing second slot (88). A common electrode (36) may be coupled to the thermal sensitive elements (42) and to the border (41). An optical coating (34) sensitive to infrared radiation may be provided in communication with the common electrode (36).

Reduced stress focal plane array for thermal imaging system and method

A novel multiple level mask (e.g. tri-level mask 36) process for masking achieves a desired thick mask with substantially vertical walls and thus improves the ion milling process of ceramic materials (e.g. BST). An embodiment of the present invention is a microelectronic structure comprising a ceramic substrate, an ion mill mask layer (e.g. photoresist 42) overlaying the substrate, a dry-etch-selective mask layer (e.g. TiW 40) overlaying the ion mill mask layer, the dry-etch-selective mask layer comprising a different material than the ion mill mask layer, a top photosensitive layer (38) overlaying the dry-etch-selective mask layer, the top photosensitive layer comprising a different material than the dry-etch-selective mask layer, and a predetermined pattern formed in the top photosensitive layer, the dry-etch-selective mask layer and the ion mill mask layer. The predetermined pattern has substantially vertical walls in the ion mill mask layer.

Multiple level mask for patterning of ceramic materials

A hybrid thermal detector (10, 110) includes a focal plane array (20, 120), a thermal isolation structure (40, 140), and an integrated circuit substrate (60, 160). The focal plane array (20, 120) includes thermal sensors (30, 130). The thermal isolation structure (40, 140) includes untrimmed mesa-type formations (44, 146, 148) and mesa strip conductors (42, 142, 144) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120) when mounted on the integrated circuit substrate (60, 160). Hybrid thermal detector (10) includes a common electrode (28) which provides a bias voltage to all thermal sensors (30). Hybrid thermal detector (110) has electrically isolated thermal sensors (130), each thermal sensor (130) is supported by mesa strip conductors (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). To improve both pixel-substrate and inter-pixel thermal isolation, mesa strip conductors (42, 142, 144) and common electrode (28) may be formed from a thermally insulating material, such as cermet or a semiconductive material. Untrimmed mesa-type formations (44, 146, 148) may be anisotropically etched to remove excess mesa material and improve pixel-substrate thermal isolation.

Thermal isolation for hybrid thermal detectors

A thermal detection system (10, 110, 210) includes a focal plane array (20, 120, 220), a thermal isolation structure (40, 140, 240), and an integrated circuit substrate (60, 160, 260). The focal plane array (20, 120, 220) includes a plurality of thermal sensors (30, 130, 230). The thermal isolation structure (40, 140, 240) includes mesa-type formations (44, 146, 148, 244) and bridge structures (42, 142, 144, 242) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120, 220) when mounted on the integrated circuit substrate (60, 160, 260). Thermal detection system (10) includes an infrared absorber and common electrode assembly (22) which provides a bias voltage to all thermal sensors (30). Thermal detection system (110) has a plurality of electrically isolated thermal sensors (130), each thermal sensor (130) is supported by bridge structures (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). Thermal detection system ( 220) has a plurality of electrically isolated thermal sensors (230), each thermal sensor (230) is electrically coupled to a pair of leads (246, 247), which are supported by a reinforcing layer (245). Bridge structures (42, 142, 144, 242) may be formed from a low thermal conductivity and adequate electrical conductivity material, such as silicon monoxide and chromium or other selected cermets.

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Garland, TX, United States of America

John P Long