International Business Machines Corporation

Other

Novellus Systems Incorporated

John Owen Dukovic

Panayotis Constantinou Andricacos

Cyprian Emeka Uzoh

Jonathan David Reid

Lubomyr Taras Romankiw

Robert J Contolini

Hariklia Deligianni

Evan E Patton

Kwong-Hon Wong

Daniel C Edelstein

Kenneth Parker Rodbell

Chao-Kun Hu

Jingbin Feng

Wilma Jean Horkans

Matteo Flotta

Steve Taatjes

Kirk G Berridge

Jeffrey S Richter

Helmut R Poweleit

Jeffrey Louis Hurd

Otto P Schick

Erick G Walton

Robert P Westerfield, Jr

Peter Stevens Locke

James Edward Fluegel

Robert W Hitzfeld

William E Corbin, Jr

Robert M Browne

Frank A Spera

Jose Ordonez

Harikilia Deligianni

Moritz Branger

Donald R McKenna

Benjamin W Fu

Saeed Sahami

A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of CU electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

Electroplated interconnection structures on integrated circuit chips

A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of Cu electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

Method of making electroplated interconnection structures on integrated circuit chips

An apparatus and method for an electrodeposition or electroetching system. A thin metal film is deposited or etched by electrical current through an electrolytic bath flowing toward and in contact with a target on which the film is disposed. Uniformity of deposition or etching is promoted, particularly at the edge of the target film, by, baffle and shield members through which the bath passes as it flows toward the target. The baffle has a plurality of openings disposed to control the localized current flow across the cross section of the workpiece/wafer. Disposed near the edge of the target, the shield member shapes the potential field and the current line so that it is uniform.

Method for enhancing the uniformity of electrodeposition or electroetching

An anode includes an anode cup, a membrane and ion source material, the anode cup and membrane forming an enclosure in which the ion source material is located. The anode cup includes a base section having a central aperture and the membrane also has a central aperture. A jet is passed through the central apertures of the base section of the anode cup and through the membrane allowing plating solution to be directed at the center of a wafer being electroplated.

Membrane partition system for plating of wafers

A method for controlling the composition of a chemical bath in which predictive dosing is used to account for changes in the composition of the bath in which the operating characteristics of the process are partitioned into a plurality of operating modes and the consumption or generation of materials related to the process are determined empirically and additions of material are made as appropriate.

Method of controlling chemical bath composition in a manufacturing environment

An apparatus and method for an electrodeposition or electroetching system. A thin metal film is deposited or etched by electrical current through an electrolytic bath flowing toward and in contact with a target on which the film is disposed. Uniformity of deposition or etching is promoted, particularly at the edge of the target film, by baffle and shield members through which the bath passes as it flows toward the target. The baffle has a plurality of openings disposed to control the localized current flow across the cross section of the workpiece/wafer. Disposed near the edge of the target, the shield member shapes the potential field and the current line so that it is uniform.

Method and apparatus for enhancing the uniformity of electrodeposition or electroetching

An anode assembly including a perforated anode. A perforated anode holder holds the anode. The anode holder includes perforations at least in a bottom wall such that plating solution may flow through perforations in the anode holder and perforations in the anode. An anode isolator separates the anode and a cathode. The anode isolator includes at least one curvilinear surface.

Anode design for semiconductor deposition

An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thickness of the deposited electrically conductive layer on the edge region. Further, the cylindrical wall of the flange can be provided with a plurality of apertures adjacent the wafer allowing gas bubbles entrapped on the wafer surface to readily escape.

Electric potential shaping apparatus for holding a semiconductor wafer during electroplating

Electric potential shaping method for electroplating

Electroplating anode including membrane partition system and method of

A fixture for supporting a workpiece in a processing cell includes a frame and cooperating workpiece holder. The frame includes a head having a hole therein which receives an integral plateau of the holder. The holder plateau includes an annular seal adjacent a perimeter thereof with a vacuum port disposed therein. The workpiece rests on the seal so that vacuum drawn in the vacuum port fixedly holds the workpiece against the plateau. Assembly of the holder plateau and workpiece thereon through the frame-head hole positions the workpiece coplanar with a front side of the frame. In exemplary embodiments, independent electrical current paths are provided to the workpiece and a surrounding auxiliary electrode.

Electroplating workpiece fixture

An electroplating cell includes a floor, ceiling, front wall, and back wall forming a box having first and second opposite open ends. A rack for supporting an article to be electroplated is removably positioned vertically to close the first open end and includes a thief laterally surrounding the article to define a cathode. An anode is positioned vertically to close the second open end, with the assembly defining a substantially closed, six-sided inner chamber for receiving an electrolyte therein for electroplating the article. The article and surrounding thief are coextensively aligned with the anode, with the floor, ceiling, front and back walls being effective for guiding electrical current flux between the cathode and the anode. In a preferred embodiment, the cell is disposed as an inner cell inside an outer cell substantially filled with the electrolyte, and a paddle is disposed inside the inner cell for agitating the electrolyte therein. The rack is removable and installable vertically upwardly which allows for automated handling thereof.

Vertical paddle plating cell

A method is described for maintaining constant chemical composition in solutions used for wet chemical processing. All chemical species that are deliberately included in the bath are kept at constant concentration primarily by a method of compensating for their depletion or generation with a set of feed solutions that are formulated and dosed into the bath in accordance with an overall material balance. Further, all chemical species not deliberately included in the bath are kept at constant concentration primarily by keeping the aggregate volume of replenishing stocks in strict proportion to the process service performed by the bath (e.g. the charge passed in an electroplating cell). Finally, a time-based scheme completes the control of the concentration of all bath species by controlling any species (whether deliberately included in the bath or not) that is depleted or generated as the result of chemical reactions which occur independently and/or spontaneously with time. Maintaining all bath chemical species at constant concentration prevents bath aging and permits production of more uniform work pieces from the bath.

Method for controlling chemical species concentration

A multi-compartment electroplating system for electroplating two or more objects simultaneously such that the electrodeposited material is substantially uniform in thickness and composition. Electroplating solution is circulated between a reservoir and a multi-compartment tank which has one cathode-paddle-anode (CPA) assembly for each compartment. Each CPA assembly has an anode, a cathode adapted for holding a wafer and employing a single thieving electrode which covers all of the floor of the compartment not covered by the wafer, and a paddle. Also included is a cover which houses a single linear motor for driving all of the paddles in synchrony.

Multi-compartment eletroplating system

Growing community of inventors

Pleasantville, NY, United States of America

John Owen Dukovic