Element Six Technologies Limited

John Olaf Hansen

Michael Peter Gaukroger

Keith Barry Guy

Robert Charles Burns

Grant Charles Summerton

Simon Craig Lawson

Timothy Patrick Gerard Addison

Daniel James Twitchen

Philip Maurice Martineau

Ian Friel

The invention relates to a single crystal CVD diamond material, wherein the extended defect density as characterized by X-ray topography is less than 400/cm2 over an area of greater than 0.014 cm2. The invention further relates to a method for producing a CVD single crystal diamond material according to any preceding claim comprising the step of selecting a substrate on which to grow the CVD single crystal diamond, wherein the substrate has at least one of a density of extended defects as characterized by X-ray topography of less than 400/cm2 over an area greater than 0.014 cm2; an optical isotropy of less than 1&#xd7;10-5 over a volume greater than 0.1 mm3; and a FWHM X-ray rocking curve width for the (004) reflection of less than 20 arc seconds.

High crystalline quality synthetic diamond

This invention relates to a method of improving the crystalline perfection of IIa diamond crystals by heating the grown diamond crystals at an elevated temperature and an elevated pressure. The invention extends to grown diamond material having a low extended defect density with low nitrogen concentration.

Method of improving the crystalline perfection of diamond crystals

Growing community of inventors

Johannesburg, South Africa

John Olaf Hansen