X-Fab Semiconductor Foundries Ag

Zarlink Semiconductor Limited

Other

Melexis Tessenderlo N.v.

John Nigel Ellis

Paul Ronald Stribley

Alan D Wilson

Piet De Pauw

Ian G Daniels

Dennis R Adcock

John C Boden

John W Nicholson

Christopher Lee

Steven Warren

A CMOS circuit comprises CMOS MOSFETs having n-type and p-type gates on the same substrate, wherein the substrate is divided into regions of n-type and p-type diffusions, and those diffusions are contained within a deeper n-type diffusion, used to junction isolate components within the deeper n-type diffusion from components outside of the deeper n-type diffusion.

CMOS circuits suitable for low noise RF applications

An array of transistors arranged next to each other on a semiconductor material forming a substrate, the substrate comprising p-well or n-well diffusions forming a body, which diffusions are used as the body regions of the transistors, each transistor comprising a source, a drain and a gate, wherein the array of transistors further comprises at least one electrical connection to the body, wherein said electrical connection is shared by at least two transistors of said array. Also disclosed is a semiconductor device comprising at least one source, at least one drain, at least one gate between the at least one source and the at least one drain, and at least one structure of the same material as the at least one gate which does not have a connection means for electrical connection to the at least one gate.

Transistor array with shared body contact and method of manufacturing

A semiconductor device including a first transistor in a substrate, a second transistor in the substrate, and a further device in the substrate. The second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage. The first voltage is the (normal) voltage of operation of the first transistor, and the first transistor is isolated from the second voltage.

Semiconductor device

A semiconductor device including a doped substrate of a first doping polarity and a doped semiconductor material of a second doping polarity. The semiconductor material is on, or in, the substrate, and the second doping polarity is opposite the first doping polarity such that the semiconductor material and the substrate form a diode. The semiconductor device further includes an inductor on or above the semiconductor material, and a pattern in the semiconductor material for reducing eddy currents. The pattern includes a doped semiconductor material of the first doping polarity and a least one trench within the doped semiconductor material of the first doping polarity, wherein, at least at a depth at which the trench is closest to the inductor, the doped semiconductor material of the first doping polarity fully surrounds the trench so that, at least at the depth, the trench does not touch the doped semiconductor material of the second doping polarity.

An optical router comprises a substantially planar substrate, a stator fixed to and projecting from an upper surface of the substrate, and a rotor surrounding the stator so as to be rotatable about the stator. At least one optical guiding component is formed in or on the rotor. A substantially planar layer is provided on the substrate surrounding the rotor and has a plurality of optical waveguides formed therein, the waveguides opening at least one end onto a space surrounding the rotor. The stator rotor, and planar layer are formed on the substrate by a series of deposition and etching steps such that the rotor may be rotated about the stator so as to align the optical guiding component with one or more of the waveguide openings.

Polysilicon optical router having rotor

Antifuses

A method of fabricating a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device with an elevated source and drain . A MOSFET region is defined on the surface of a silicon substrate , and a central area of that region removed by etching down to a predefined depth. Raised areas on either side of the resulting recess are doped to form the drain and a source, such that an active channel of the MOSFET device is provided wholly beneath the base of the recess

Metal oxide semiconductor field effect transistors

A flare tip structure has a tubular component usually mounted at the top of a flare sack which emits waste gas into the atmosphere for disposal by combustion with the aid of one or more pilot burners. Several fluid injectors are mounted inside the component and emit cones of injection fluid, such as natural around the axis of the tubular component. A deflector assists the injectors in creating a cushion of fluid just above the opening of the tubular component to space the combustion flame away from the opening. This allows surrounding air to flow into the gap between the opening and the combustion flame and to mix with waste gas prior to combustion to suppress smoke.

Flare tip structure and a method of disposal of gas ulilizing such a

A metallic container for beverage is protected from its contents by electrodeposited zinc, which is anodized in alkali then anodically reacted with weak poly(acrylic acid) and finally cured at 85.degree. C. at 100% relative humidity.

Growing community of inventors

Tavistock, United Kingdom

John Nigel Ellis