Carl Zeiss Nts Gmbh

John Morgan

Rainer K Knippelmeyer

Lawrence Scipioni

Christoph Riedesel

Ulrich Mantz

Ulrich Wagemann

A first instrument () is used to image a first semiconductor article having a trench () of defined cross-section, while a second instrument () is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench () of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.

Cross-section systems and methods

Methods and systems for defect repair are disclosed. The methods include: (a) identifying a defect causing an absence of an electrical connection between a first circuit element and a second circuit element, the first and second circuit elements being positioned in or on a substrate and the defect being positioned in the substrate; (b) removing a portion of the substrate to expose the defect, and depositing a conductive material to electrically connect the first and second circuit elements; and (c) verifying that the defect caused the absence of an electrical connection between the first and second circuit elements.

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Marblehead, MA, United States of America

John Morgan