Agere Systems Inc.

Agere Systems Guardian Corp.

John Michael Sharpe

Sudhanshu Misra

Vivek Saxena

Donald Thomas Cwynar

Dennis Okumu Ouma

Matthew Moucheron

Mary Drummond Roby

Canzhong He

John Anthony Pantone

John A Schuler

Jerome Chu

Carl A Benevit

Shane S Dias

Hong-Ha Vuong

An on-chip capacitive device comprises a semiconductor substrate, a MOS capacitor formed on the semiconductor substrate, and a metal interconnect capacitor formed at least in part in a region above the MOS capacitor. The MOS capacitor and the metal interconnect capacitor are connected in parallel to form a single capacitive device. The capacitance densities of the MOS capacitor and the metal interconnect capacitor are, thereby, combined. Advantageously, significant capacitance density gains can be achieved without additional processing steps.

Metal capacitor stacked with a MOS capacitor to provide increased capacitance density

The present invention provides a non-global process for designing an integrated circuit layout. The process comprises locating an isolated layout feature of an integrated circuit layout and non-globally changing at least one lateral dimension of the isolated layout feature to obtain an optimized increment. The change in lateral dimension by the optimized increment does not violate a minimum separation distance between the isolated layout feature and the other adjacent layout features. The process may be incorporated into a system for non-globally modifying an integrated circuit layout, described in a data file or an integrated circuit design system.

Process for the selective control of feature size in lithographic processing

A semiconductor device with an interconnect layer having a plurality of layout regions of active interconnects and dummy fills for uniform planarization. In one embodiment, the device will have at least one interconnect layer with a plurality of layout regions overlying the semiconductor substrate. Each layout region will comprise an active interconnect feature region and a dummy fill feature region adjacent thereto for facilitating uniformity of planarization during manufacturing. Each dummy fill region in each layout region will have a different density with respect to other dummy fill regions in other layout regions, so that the combined density of the active interconnect feature region and the dummy fill feature region in a layout region will be substantially uniform with respect to a similar combined density in each of the other layout regions.

Semiconductor device having an interconnect layer with a plurality of layout regions having substantially uniform densities of active interconnects and dummy fills

A process for evaluating and correcting virtual integrated circuit designs includes a method and apparatus for determining a ratio of an amount of material, i.e. polysilicon or metal, in any given layer to an area of the layer. The ratio is then compared to a predetermined target ratio, which is based on a ratio of the total amount of the material to the entire area of the I-C design. The process then automatically inserts or deletes an amount of material from the layer as needed, using any of four methods. These methods include deletion, scaling, deletion and scaling or striping. The ratio for an erroneous layer is rechecked after the first correction is performed and the entire process is repeated using a Newton-Raphson or a Least Absolute Deviation Regression method until the ratio falls within the predetermined tolerances. If the layer has been filled, the layer is further checked for short circuits, fill isolation violations, antenna violations and the like which may have resulted from the material fill. The evaluation and correction process proceeds for each layer of the virtual integrated circuit design until the entire design has been evaluated and corrected.

Method and apparatus for evaluating and correcting errors in integrated circuit chip designs

A method for making a layout for an interconnect layer of a semiconductor device to facilitate uniformity of planarization during manufacture of the semiconductor device includes determining an active interconnect feature density for each of a plurality of layout regions of the interconnect layout. The method further includes adding dummy fill features to each layout region to obtain a desire density of active interconnect features and dummy fill features to facilitate uniformity of planarization during manufacturing of the semiconductor device. By adding dummy fill features to obtain a desired density of active interconnect features and dummy fill features, dummy fill features are not unnecessarily added, and each layout region has a uniform density.

Method for making an interconnect layer and a semiconductor device including the same

Growing community of inventors

Allentown, PA, United States of America

John Michael Sharpe