Facebook Technologies, LLC

Meta Platforms Technologies, LLC

John Michael Goward

Chloe Astrid Marie Fabien

James Ronald Bonar

William Padraic Henry

Stephen John Holmes

Christophe Antoine Hurni

Brian Matthew McSkimming

In a flip-chip LED assembly having an array of LEDs formed on the same substrate, different LEDs of the array have different distances to the n-contacts of the assembly. This may cause current crowding as current has to spread from the n-contacts through the substrate to each the farthest LEDs of the LED array, requiring LEDs that are farther away to be driven with a higher voltage in order to receive a desired amount of current. To spread current more evenly through the LED assembly and reduce a voltage difference between the closest and farthest LEDs of the array, one or more additional n-contacts are formed within the LED array. In some embodiments, the n-contacts may replace a pixel of the LED array. In other embodiments, one or more p-contacts of the LED array are resized or repositioned to accommodate the additional n-contacts without sacrificing pixels of the LED array.

Display with replacement electrodes within pixel array for enhanced current spread

Embodiments relate to nanoporous copper interconnects on a first body for electrically connecting to a second body. To fabricate the nanoporous copper interconnect, a zinc-copper alloy is deposited on recesses on the surface of the first body, and then the zinc is removed from the zinc-copper alloy to obtain nanoporous copper. The first body and the second body can be attached using bonding between oxide surfaces of the two bodies or be provided with underfill between the two bodies. The nanoporous copper electrically connects to an active layer or electrical components of the first body and the second bodies. Using nanoporous copper as interconnects is advantageous, among other reasons, because it can be formed at a low temperature, it is compatible with a standard complementary metal-oxide-semiconductor (CMOS) process, it provides good electrical conductivity, and it is less likely to cause issues due to migration of material.

Formation of nanoporous copper interconnect for electrical connection

Embodiments relate to the design of a device capable of maintaining the alignment an interconnect by resisting lateral forces acting on surfaces of the interconnect. The device comprises a first body comprising a first surface with a nanoporous metal structure protruding from the first surface. The device further comprises a second body comprising a second surface with a locking structure to resist a lateral force between the first body and the second body during or after assembly of the first body and the second body.

Interconnect using nanoporous metal locking structures

A first conductive pad is connected to a second conductive pad by using a post-transition metal and a nanoporous metal. An example of the post-transition metal is indium. An example of the nanoporous metal is nanoporous gold. A block of the post-transition metal is formed on the first conductive pad. The block of the post-transition metal is coated with a layer of anti-corrosion material. A block of the nanoporous metal is formed on the second conductive pad. The block of the post-transition metal and the block of the nanoporous metal are thermal compressed to form an alloy between the first conductive pad and the second conductive pad.

Connecting conductive pads with post-transition metal and nanoporous metal

A method for directly bonding semiconductor devices from multiple carrier substrates to a target substrate using relative alignments of semiconductor contacts to substrate contacts, as well as relative heights of semiconductor contacts to substrate contacts. The method may include directly bonding a subset of semiconductor devices on a first carrier substrate with a first alignment to a subset of substrate contacts, and directly bonding a subset of second semiconductor device on a second carrier substrate with a second alignment to a subset of substrate contacts. The method may include directly bonding a subset of semiconductor devices with a first height on a first carrier substrate to a first subset of substrate contacts, followed by directly bonding a second subset of second semiconductor devices with a second height on a second carrier substrate to a second subset of substrate contacts.

Bonding strategies for placement of LEDs from multiple carrier substrates

Embodiments relate to the fabrication of an interposer with nanofibers by an additive process to electrically connect two or more electronic components. The nanofibers are grown on a substrate away from a surface of the substrate. The nanofibers are plated with a conductive material such that the nanofibers are encompassed in a column of the conductive material. An insulative material fills at least the volume between the columns of conductive material. The substrate and the interposer is the remaining device. The interposer can be combined with a redistribution layer to connect electronic components of dissimilar pitch.

Interposer with carbon nanofiber columns

A multi-layer device including device layers connected by an interposer. For example, an electronic display may include a light emitting diode (LED) layer including LEDs and a control circuitry layer to provide control signals to the LEDs. The electronic display further includes an interposer positioned between the LED layer and the control circuitry layer. The interposer includes a substrate and an array of conductive pillars extending through the substrate. The conductive pillars electrically connect the LED layer with the control circuitry layer. Bonding layers may be formed on the interposer and a corresponding side of a device layer to facilitate a hybrid bonding process that electrically connects contacts of the device layer to the conductive pillars and joins the bonding layers to attach the device layer to the interposer.

Interposer for multi-layer display architecture

Embodiments relate to the design of a device capable of increasing the electrical performance of an interconnect feature by amplifying the current carrying capacity of an interconnect feature. The device comprises a first body comprising a first surface with at least one nanoporous conductive structure protruding from the first surface. The device further comprises a second body comprising a second surface with arrays of nanofibers extending from the second surface and penetrating into corresponding nanoporous conductive structures to form conductive pathways between the first body and the second body.

Interconnect using embedded carbon nanofibers

Embodiments relate to forming nanoporous contacts on a receiving substrate without using a seed layer on the receiving substrate. The nanoporous contacts can be used to create bonds between electronic components and the receiving substrate. To form the contacts, a photoresist mask is created on the receiving substrate by a photolithographic process. Through a sputtering process, portions of co-alloy on a depositing substrate are transferred to the receiving substrate with the photoresist mask. The photoresist mask is removed from the receiving substrate. The remaining co-alloy portions on the receiving substrate undergo a de-alloying process to form an array of nanoporous contacts.

Seed layer free nanoporous metal deposition for bonding

A method and system for manufacturing a device by picking and placing semiconductor devices from a carrier substrate to a target substrate using fluidic material as a transfer medium. The method may include releasing a first amount of fluidic material from a tip of a pick-up head to form a fluidic membrane on the tip, and bringing the fluidic membrane on the tip of the pick-up head in contact with a semiconductor device on a carrier substrate to attach the semiconductor device to the fluidic membrane. The method can further include releasing a second amount of the fluidic material from the tip of the pick-up head to separate the semiconductor device from the pick-up head and place the semiconductor device on a target substrate.

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Ayr, United Kingdom

John Michael Goward