Lsi Corporation

Agere Systems Inc.

Avago Technologies General IP (singapore) Pte. Ltd.

John Michael DeLucca

Frank Alexander Baiocchi

John William Osenbach

Joseph Michael Freund

James Thomas Cargo

Barry J Dutt

Ronald James Weachock

Roger A Fratti

Charles B Martin

Mark Adam Bachman

Ahmed Nur Amin

David Kern

Aspects of the disclosure pertain to a system and method for providing an electron blocking layer with doping control. The electron blocking layer is included in a semiconductor assembly. The electron blocking layer includes a lithium aluminate layer. The lithium aluminate layer promotes reduced diffusion of magnesium into a layer stack of the semiconductor assembly.

System and method for providing an electron blocking layer with doping control

An electronic device comprising a bond pad on a substrate and a wire bonded to the bond pad. The device further comprises an intermetallic compound interface located between the bond pad and the wire and a silicon nitride or silicon carbonyl layer covering the intermetallic compound interface.

Moisture barrier for a wire bond

An apparatus comprises a first housing having a top surface and a bottom surface, a second housing having a top surface and a bottom surface, and one or more supports coupling the first housing to the second housing such that the first and second housings are electrically connected and the bottom surface of the first housing overlays the top surface of the second housing. The one or more supports are configurable in at least a first configuration wherein the bottom surface of the first housing and the top surface of the second housing are substantially contiguous with one another and a second configuration wherein the bottom surface of the first housing and the top surface of the second housing are separated by a space.

Enhanced mobile device having multiple housing configurations

An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.

Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuits

An etchant for dielectrics, such as silicon dioxide, that leaves monocrystalline silicon surface exposed by the etchant free of etch damage, such as etch pits, when the etch is done in the presence of transition metals, such as copper, tungsten, titanium, gold, etc. The etchant comprises hydrofluoric acid and a source of halide anion, such as hydrochloric acid or a metal-halide. The etchant is useful in microelectromechanical system device fabrication and in deprocessing integrated circuits or the like.

Dielectric etching

An electronic device bond pad includes an Al layer located over an electronic device substrate. The Al layer includes an intrinsic group 10 metal located therein.

Aluminum bond pads with enhanced wire bond stability

Devices having voids are producible by employing an electrochemical corrosion process. For example, an electrically conductive region is formed to have a surrounding chemically distinct region. Such formation is possible through conventional semiconductor processing techniques such as a copper damascene process. The surrounded conducting material is configured to be in electrical communication with a charge separation structure. The electrically conducting region is contacted with a fluid electrolyte and electromagnetic radiation is made to illuminate the charge separation region to induce separation of electrons and holes. The resulting separated charges are used to drive an electrochemical corrosion process at the conductive material/electrolyte interface resulting in the removal of at least a portion of the electrically conducting material. The induced corrosion leaves a void that is useful, for example, as a highly effective dielectric in integrated circuits, functions to allow component separation such as gear separation in microelectromechanical devices or produces long cavities useful for material separation analogous to the distillation columns used in liquid chromatography.

Material removing processes in device formation and the devices formed thereby

Many electronic entities such as integrated circuits and discrete power devices have contact pads formed from successively deposited layers of nickel and a second metal such as gold. The resulting pad structure is used to make external electrical connection such as solder connection. Problems associated with failure of such connections are avoidable by inspecting the surface of the nickel layer for excessive small particle formation.

Method of making electronic entities

A calibration standard includes a silicon substrate having a plurality of defined regions and a plurality of calibration marks placed on respective defined regions of the silicon substrate. Each calibration mark comprises a different calibration dimension indicator and a corresponding dimension identifier. A method for calibrating a transmission electron microscope using the standard comprises positioning the calibration standard in a viewing area of the transmission electron microscope and sequentially viewing the marks and adjusting the calibration of the microscope for each mark viewed.

Growing community of inventors

Wayne, PA, United States of America

John Michael DeLucca