USA As Represented by Secretary of the Navy

Universitaet Kassel

John Melngailis

Klaus Edinger

Weizhong Wang

Piotr Grabiec

Ivajlo Rangelow

Marty Peckerar

The invention relates to a sensor, especially for the probe of a screen probe microscope, for examining probe surfaces () or areas adjacent to the sensor, comprising at least one field effect transistor (FET) made of at least one semiconductor material. The invention also relates to a Hall sensor made of at least one semiconductor material for detecting magnetic fields and whose lateral resolution capacity can be electrically adjusted, in addition to a semiconductor electrode () whose electrode surface can be electrically adjusted.

Field effect transistor sensor

Channel doping and gate lithography are simulatneously performed by focusing an ion beam into the wafer through a positive or negative photoresist that is sensitive to the ion beam. Additional fabrication is then performed to provide a gate that is self-aligned with the doped channel.

Fully self-aligned high speed low power MOSFET fabrication

Growing community of inventors

Chevy Chase, MD, United States of America

John Melngailis