Massachusetts Institute of Technology

John Melngailis

Hermann A Haus

David C Shaver

Mark A Hartney

Tao Tao

Ana L Lattes

A resist exposed to a micron or sub-micron pattern of highly absorbed ion beams forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are then removed by a plasma etch. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist. The process allows feature definition below 1000 Angstroms using a relatively inexpensive single element low energy ion source.

Positive resist pattern formation through focused ion beam exposure and

Metal is deposited in lines of submicron width by scanning a focused ion beam along a substrate in the presence a vapor of a precursor platinum compound. High deposition rates and steep walls may be obtained by milling a cavity or trench with the focused beam and then locally applying the precursor vapor while scanning of the beam continues. Platinum containing features deposited in this way extend horizontally between wires, or vertically between layers to form conductive interconnects in integrated circuits, and also form pattern repairs in x-ray masks. The platinum chemistry is compatible with silicon wafer processing.

Ion beam induced deposition of metals

A surface acoustic wave (SAW) device including a crystal substrate having two substantially planar surfaces and at least one SAW-to-plate mode coupler positioned on one of the surfaces. The SAW-to-plate mode coupler includes a plurality of parallel, linear surface perturbations. The surface perturbations are adapted to convert a portion of an incident SAW to a bulk acoustic wave (BAW). In addition, the coupler is adapted to convert a portion of an incident BAW (from the crystal bulk region) to a SAW at those surface perturbations. In addition, the planar surfaces of the crystal substrate are adapted to reflect portions of incident BAW's. The coupler is positioned with respect to the crystal characteristics so that SAW's and BAW's resonantly interact at the coupler. In alternative configurations, a second SAW-to-plate mode coupler is positioned on the second surface of the crystal substrate. This second surface coupler also is adapted to convert a portion of an incident SAW to a bulk acoustic wave (BAW) at a plurality of parallel surface perturbations, and to convert a portion of an incident BAW to a SAW at those perturbations. The couplers are positioned in view of the crystal characteristics so that the BAW's and SAW's resonantly interact at the couplers.

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Newton, MA, United States of America

John Melngailis