Agere Systems Inc.

John McKenna Brennan

Joseph Michael Freund

John William Osenbach

Timothy Brooks Bambridge

John Wayne Bowen

Hugo Fernando Safar

Richard Handly Shanaman, Iii

Donald Farrell

Thomas Herbert Shilling

Ralph Salvatore Moyer

Curtis James Miller

Sujal Dipak Shah

Joseph Micheal Freund

Jeffrey John Gilbert

An integrated circuit is wire bonded in a manner such that there is consistent RF performance from integrated circuit package to integrated circuit package. Bond distances within the integrated circuit are measured, each corresponding to a wire bond to be formed. An area under a hypothetical wire bond profile is calculated as a function of the bond distances, a baseline wire length, and a baseline loop height. A wire is bonded across a given one of the bond distances to form a given one of the wire bonds. A wire bond profile for the given wire bond is provided having an area thereunder that is substantially equal to the calculated area.

Methods and apparatus for wire bonding with wire length adjustment in an integrated circuit

A method for performing a wire-bonding operation in an integrated circuit utilizes a bonding tool. A wire is bonded to a first bond site in the integrated circuit, and terminated at a second bond site in the integrated circuit. The bonding and terminating steps are repeated for a plurality of additional wire bonds of the integrated circuit. At least two wire bonds in the integrated circuit are substantially perpendicular to one another at a crossing point in a plan view of the integrated circuit.

Integrated circuit with substantially perpendicular wire bonds

Device packages often include walls build on a heat sink that surrounds a device die that thermally interacts with the heat sink. Use of raised or depressed feature on said heat sink that contacts the walls improves the cohesiveness of the package. By appropriately positioning these features contaminant infusion into the package is improved without degrading cohesiveness.

Device package

Devices such as amplifiers are built on a heat sink having a perimeter wall surrounding active electronic devices. Surprisingly formation of wire bonds to such devices tends to be degraded if they have an aspect ratio greater than 2:1. This problem is overcome by forming wire bonds before such walls have a height of 30 mils and after bond formation extending the walls to their final height.

Device packages

A semiconductor device includes an IC die configured to reduce post-fabrication damage to the device. The IC die is formed such that at least a portion of one or more perimeter edges of the die are beveled by an etching process. The semiconductor device may include a plurality of IC dies, at least one of the IC dies being separated from the semiconductor device by forming one or more v-shaped grooves in an upper surface of the device, the v-shaped grooves defining perimeter edges of the at least one IC die. A back surface of the semiconductor device is removed until at least a portion of the v-shaped grooves are exposed. When the IC die is separated from the semiconductor device in this manner, a sidewall of each of the v-shaped grooves forms a beveled perimeter edge of the separated IC die.

Semiconductor device configured for reducing post-fabrication damage

Power transistor devices and techniques for reducing bowing in such devices are provided. In one aspect, a power transistor device is provided. The power transistor device comprises a substrate, a device film formed on the substrate and an adhesion layer formed on a side of the substrate opposite the device film, wherein at least a portion of the adhesion layer is at least partially segmented. The power transistor device thereby exhibits a reduced amount of bowing relative to an amount of bowing expected without the segmenting of the adhesion layer. The power transistor device may be part of an integrated circuit.

Techniques for reducing bowing in power transistor devices

An integrated circuit comprises an integrated circuit package and a plurality of circuit elements disposed within the integrated circuit package. A plurality of wire bonds provide connections for at least one of the circuit elements. At least one wire bond in a first subset of wire bonds and at least one wire bond in a second subset of wire bonds are substantially perpendicular to one another at a crossing point of the wire bonds in a plan view of the integrated circuit.

A method for attaching at least one IC die to a non-ceramic IC package including a leadframe and a base, the IC package being configured for receiving the at least one IC die, includes attaching the IC die to an upper surface of a thermal carrier in a manner which facilitates thermal transfer between the die and the carrier. The method further includes attaching the thermal carrier having the IC die attached thereto to an upper surface of the base of the IC package. In this manner, one or more IC dies may be attached to a standard plastic IC package without a significant impact on thermal transfer in the device and at a significant cost savings compared to ceramic IC packages.

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Wyomissing, PA, United States of America

John McKenna Brennan