Agere Systems Inc.

Agere Systems Guardian Corp.

Lucent Technologies Inc.

John Martin McIntosh

Erik Cho Houge

Catherine B Vartuli

Brittin C Kane

Fred Anthony Stevie

Larry E Plew

Scott Jessen

Simon John Molloy

Isik C Kizilyalli

Annette Margaret Crevasse

Nace Layadi

Edward Rietman

Thomas Evans Adams

Stephen Arlon Meisner

Jeffrey Bruce Bindell

Michael J Antonell

Robert Francis Jones

Thomas Michael Wolf

James W Blatchford, Jr

Cynthia C Lee

Ryan Keith Maynard

Steven Barry Valle

Alberto Santoni

Thomas S Frederick

Scott M Nagel

Todd C Henry

A system () for monitoring and controlling a fabrication process includes at least a first subsystem (), a crystallographic analysis subsystem (), and a second subsystem (), wherein the first subsystem and second subsystem perform respective fabrication steps on a workpiece. The crystallographic analysis subsystem may be coupled to both the first subsystem and second subsystem. The analysis subsystem acquires crystallographic information from the workpiece after the workpiece undergoes a fabrication step by the first subsystem and then provides information, based on the crystallographic information acquired, for modifying parameters associated with the respective fabrication steps. The system may also include neural networks () to adaptively modify, based on historical process data (), parameters provided to the respective fabrication steps. The analysis subsystem may include a electromagnetic source (), a detector (), a processor (), a controller () and a scanning actuator ().

Monitoring and control of a fabrication process

Wrist/hand worn mirror

A method for nondestructively characterizing alignment overlay between two layers of a semiconductor wafer. An incident beam of radiation is directed upon the wafer surface and the properties of the resulting diffracted beam are determined, in one embodiment as a function of wavelength or incident angle. The spectrally or angularly resolved characteristics of the diffracted beam are related to the alignment of the overlay features. A library of calculated diffraction spectra is established by modeling a full range of expected variations in overlay alignment. The spectra resulting from the inspection of an actual wafer having alignment targets in at least two layers is compared against the library to identify a best fit to characterize the actual alignment. The results of the comparison may be used as an input for upstream and/or downstream process control.

Overlay metrology using scatterometry profiling

A semiconductor manufacturing method analyzes topography variations in three dimensions for each photolithographic level and determines critical dimension (CD) bias compensation as inputs to mask layout creation. Accurate predictions of topography variation for a specific mask design are made at the die level using known pattern density and CMP planarization length characteristics for a specific pattern. Exhaustive characterization of the photoresist response to de-focus and mask bias is determined by artificially expanding loss of CD through focus. Mask compensation to an expanded range of focus over all lines and spaces is maintained within the specification. 3D mask density data is obtained to determine the height component at each pixel location in the die. The resulting 3D OPC model is then utilized for mask creation.

Substrate topography compensation at mask design: 3D OPC topography anchored

A method and apparatus used to calibrate high-resolution electron microscopes where a single standard provides multiple samples, each having a different atomic structure, permits rapid accurate calibration of the entire range of magnifications. The different atomic structure dimensions possess known reference measurement data. The S/TEM is adjusted to focus onto the crystal lattice structure of each sample in a selected sequence. Measurements of these lattice spacings are compared to known dimensions. If S/TEM measurements do not agree with the lattice spacing dimensions, the S/TEM magnification is adjusted to reflect known dimensions. Typical standard exchange and associated processing steps are eliminated by the use of the single standard comprising of a plurality of samples.

Calibration standard for high resolution electron microscopy

A probe comprising a probe body having a body longitudinal axis and a shoulder, and a microstylet mechanically coupled to the shoulder, and a method of manufacturing the same. The microstylet extends from the shoulder and has a microstylet longitudinal axis coincident the body longitudinal axis with the microstylet having a cross section substantially smaller than a cross section of the probe body.

Probe having a microstylet

A system and method of metrology ( ) whereby a three dimensional shape profile is defined ( ) for a surface feature on a substrate by applying ( ) a transform function F(x) to an image intensity map I(x,y) obtained ( ) by inspecting the substrate with a scanning electron microscope ( ). The transform function F(x) is developed ( ) by correlating the image intensity map of a first wafer ( ) to a height vector ( ) obtained by inspecting the first wafer with a more accurate metrology tool, for example a stylus nanoprofilometer ( ). A simple ratio-based transform may be used to develop F(x). An asymmetric multiple parameter characterization of the three dimensional shape profile may be developed ( ) by plotting critical space and width dimensions (S , S , W , W ) from a vertical axis (C&mdash;C) as a function of height of the feature.

Three dimensional reconstruction metrology

A semiconductor manufacturing automation method for analyzing a patterned feature formed on a semiconductor layer is disclosed. At least one patterned feature is scanned to generate an amplitude modulated waveform signal of the line and neighboring space characteristics. Signal processing is automatically performed on this waveform by an in-line computational source to extract known patterned features based on the profile of the amplitude modulated waveform signal. The extracted waveform segments are subjected to known geometric shapes to determine if the waveform indicates a normal or abnormal patterned feature on a semiconductor layer.

Abnormal photoresist line/space profile detection through signal processing of metrology waveform

In-line process control for 120 nm and 100 nm lithography using the installed scanning electron microscope (SEM) equipment base. A virtual three-dimensional representation of a photoresist feature is developed by applying a transform function to SEM intensity data representing the feature. The transform function correlates highly accurate height vector data, such as provided by a stylus nanoprofilometer or scatterometer, with the highly precise intensity data from the SEM. A multiple parameter characterization of at least one critical dimension of the virtual feature is compared to an acceptance pattern template, with the results being used to control a downstream etch process or an upstream lithography process. A multiple parameter characteristic of a three dimensional representation of the resulting post-etch final feature may be compared to device performance data to further refine the acceptance pattern template.

Process control using three dimensional reconstruction metrology

An integrated metrology and lithography/etch system and method ( ) for micro-electronics device manufacturing. A process control neural network ( ) is used to develop an estimated process control parameter ( ) for controlling an etching process ( ). The process control neural network is responsive to a multi-parameter characterization of a patterned resist feature MPC(PR) ( ) developed on a substrate. The process control parameter is used as a feed-forward control for the etching process to develop an actual final mask feature. A multi-parameter characterization of the actual final mask feature MPC(HM) ( ) is used as an input to a training neural network ( ) for mapping to an ideal process control parameter. The ideal process control parameter is compared to the estimated control parameter to develop an error parameter ( ), which is then used to train the process control neural network.

Control of semiconductor processing

The present invention relates to a device for testing particles for composition and concentration. The device includes a particle counter, a collector screen, and a mass spectrometer. In one embodiment, the collector screen is positioned to receive particles received by the particle counter, and the mass spectrometer is positioned to receive counted particles retained on the collector screen.

Mass spectrometer particle counter

The present invention provides a method of forming a dynamic template with a focused beam. The method includes forming a desired template that represents a desired image, forming an actual template that represents an actual image, such as a photolithographic mask or a semiconductor device feature, and comparing the desired template to the actual template to yield a deviation template. In one embodiment the deviation template is formed by subtracting the actual template from the desired template.

Method of focused ion beam pattern transfer using a smart dynamic template

A reflective lens with at least one curved surface formed of polycrystalline material. In one embodiment, a lens structure includes a substrate having a surface of predetermined curvature and a film formed along a surface of the substrate with multiple individual members each having at least one similar orientation relative to the portion of the substrate surface adjacent the member such that collectively the members provide predictable angles for diffraction of x-rays generated from a common source. A system is also provided for performing an operation with x-rays. In one embodiment, a system includes a source for generating the x-rays, a polycrystalline surface region having crystal spacing suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, and transmitting the reflected x-rays to a reference position. An associated method includes providing x-rays to polycrystalline surface region having crystal spacings suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, transmitting the reflected x-rays to a reference position and positioning a sample between the surface region and the reference position so that the x-rays are transmitted through the sample.

X-ray system

The present invention provides a method of determining a crystallographic quality of a material located on a substrate. The method includes determining a set of crystallographic solutions for an unknown crystallographic orientation, and subsequently comparing the set of crystallographic solutions to adjacent known crystallographic orientations to determine the unknown crystallographic orientation. In a preferred embodiment, the set of crystallographic solutions may be a rank of crystallographic solutions which may represent the most probable crystallographic orientations. The rank of crystallographic solutions, in an alternative embodiment, may be represented by a vote, a fit and a confidence index.

Method of determining a crystallographic quality of a material located on a substrate

Method for fabricating a structure. According to an exemplary embodiment, a structure is made by forming a layer of removable material with a first surface spaced a part from a second surface. The first surface is formed along a first region from which the material is removable. The first surface is altered by removal of material from the layer. Removed material from the first surface is monitored to detect fluctuations in a variable of composition in the layer, and removal of material from the first surface is terminated when the composition of monitored material meets a predetermined criterion. In an alternate embodiment a variable characteristic is imparted to a layer of material as a function of layer thickness and an operation is performed on the layer resulting in removal of material. Samples of removed material are monitored for variation in the characteristic and the operation is modified when a variation conforms with a criterion.

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Orlando, FL, United States of America

John Martin McIntosh