Motorola Corporation

Freescale Semiconductor,inc.

Nxp Usa, Inc.

John Mark Boyer

Anis Mahmoud Jarrar

John J Vaglica

David Russell Tipple

Grady L Giles

Bernard J Pappert

Thomas K Johnston

Nancy Hing-Che Amedeo

William Clayton Bruce, Jr

Saji George

An integrated circuit includes a master-slave storage element having a data input coupled to receive a data signal and an asymmetrical clock generator coupled to provide an asymmetrical clock signal to the master-slave storage element. A first phase of the asymmetrical clock signal is configured for inhibiting intermediate data signal transitions from propagating through the master portion of the master-slave storage element.

Duty cycle control for reduced dynamic power consumption

A processing system includes a processor core, a peripheral component, and a flip-flop unit in at least one of the processor core and the peripheral component. The flip-flop unit can include a master latch, and two slave latches coupled to an output of the master latch. The first slave latch is formed over a first doped well region of a semiconductor substrate. The second slave latch is formed over a second doped well region of the semiconductor substrate. A comparator is coupled to an output of the first slave latch and to an output of the second slave latch. An output of the comparator indicates whether a state stored in the first slave latch is the same as a state stored in the second slave latch.

Multi-bit flip-flop with enhanced fault detection

A method and apparatus that improves either power savings and/or DRAM system access bandwidth in an embedded DRAM device. The apparatus (200, 800, or 900) contains embedded DRAM memory devices (212, 802, or 902) which require refresh operations in order to retain data. As the memory devices (212, 802, or 902) are accessed by read and write system operations and by refresh operations, a set of history bits (204, 808, 904) are continually updated to indicate a level of freshness for the charge stored in various DRAM memory rows. When scheduled refresh opportunities arrive for each memory row in the embedded DRAM devices, the history bits (204, 808, 904) are accessed to determine if the refresh operation of a row of memory should be performed or if the refresh operation should be postponed until a subsequent refresh time period.

Method and apparatus for leveraging history bits to optimize memory

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Austin, TX, United States of America

John Mark Boyer