Motorola Corporation

John M Smith

Yuda Yehuda Luz

Alan P Rottinghaus

Danny T Pinckley

Kevin M Laird

Paul Fielding Smith

Daniel Morris Lurey

Robert C Elder

Donald E Bailey

Shelia Marie Rader

Tony Kobrinetz

Anthony Kobrinetz

Martinho Rabindra Pais

Petr Kacena

Vinh Dinh Dino Trinh

Kevin Michael Laird

Danny Thomas Pinckley

James F Long

Sheila M Rader

Joseph J Schuler

Ronald J Wanat

Sheila Marie Rader

Embedded electronics (,) are operated under normal operating conditions, with power being supplied to embedded electronics via a power source (,). Heat is generated via the normal operation of the embedded electronics (,), and a voltage (,) is generated via thermionic emission from the heat. The voltage (,) that is generated is supplied to the power source (,) to help power the embedded electronics (,).

Method and apparatus for utilizing heat dissipated from an electrical device

Multiple access digital transmitter and receiver

A multi-channel digital transceiver (400) receives uplink radio frequency signals and converts these signals to digital intermediate frequency signals. Digital signal processing, including a digital converter module (426), is employed to select digital intermediate frequency signals received at a plurality of antennas (412) and to convert these signals to baseband signals. The baseband signals are processed to recover a communication channel therefrom. Downlink baseband signals are also processed and digital signal processing within the digital converter module (426) up converters and modulates the downlink baseband signals to digital intermediate frequency signals. The digital intermediate frequency signals are converted to analog radio frequency signals, amplified and radiated from transmit antennas (420).

Multi-channel digital transceiver and method

A cellular radiotelephone communication system cell site equipment is provided. The cell site equipment includes a radio frequency transmitter operating as one signal frequency source. In addition, the cell site equipment includes a first and a second signal combiner device tuned to a first and a second signal frequency, respectively. Further, the cell site equipment includes a radio frequency switching mechanism, operatively coupled to the radio frequency transmitter, the first signal combiner device, and the second signal combiner device, for coupling the radio frequency transmitter to either of the first and the second signal combiner devices. In one embodiment, each signal combiner device includes a resonant cavity for isolating a signal frequency source from other signal frequency sources and a coupling for coupling the isolated signal frequency source to a common transmitter output. In an alternative embodiment, each signal combiner device includes a resonant cavity for isolating a signal frequency source from other signal frequency sources and a coupling for coupling the isolated signal frequency source of the first and the second signal combiner device to a first and a second common transmitter output, respectively.

High capacity sectorized cellular communication system

An antenna switching system for handling high traffic sectors in a cellular radiotelephone system. The system switches the cell's base station transmitters to sectors that have more mobile traffic than they can handle. The additional transmitters increase the number of frequencies in the overloaded sector, thereby allowing a greater amount of mobile traffic to use the cell.

Antenna switching system

High frequency power transistor carriers are made by bonding a metalized ceramic base to a lead frame strip, subsequently gold plating the resultant structure and then cutting the lead frame strip to isolate the base and collector leads while still maintaining the transistor carriers in strip form. Transistor dice are then attached to each ceramic carrier, and each transistor carrier in the strip is then electrically tested. The individual carriers are then separated from the lead frame strip. The individual carrier has wide base and collector leads extending outward from the ceramic base for a substantial distance and then the base and collector leads are narrowed down. When the individual transistor carrier is used in combination with a hybrid assembly, a reduction in lead inductance and total hybrid package size is obtained while exact carrier placement relative to the hybrid assembly is not required.

Method of manufacturing RF power semiconductor package

High frequency power transistor carriers are made by bonding a metalized ceramic base to a lead frame strip, cutting the lead frame strip to isolate the base and collector leads while still maintaining the transistor carriers in strip form, and subsequently gold plating the resultant structure. Transistor dice are then attached to each ceramic carrier, and each transistor carrier in the strip is then electrically tested. The individual carriers are then separated from the lead frame strip. The individual carrier has wide base and collector leads extending outward from the ceramic base for a substantial distance and then the base and collector leads are narrowed down. When the individual transistor carrier is used in combination with a hybrid assembly, a reduction in lead inductance and total hybrid package size is obtained while exact carrier placement relative to the hybrid assembly is not required.

RF power semiconductor package and method of manufacture

Growing community of inventors

Elgin, IL, United States of America

John M Smith