Ovonyx Inc.

Other

Stmicroelectronics S.r.l.

Intel Corporation

L.b. Foster Rail Technologies, Corp.

Union Pacific Railroad

John M Peters

George A Gordon

Tyler A Lowrey

Stanford R Ovshinsky

Charles C Kuo

Guy Charles Wicker

Ward D Parkinson

Ilya V Karpov

Charles H Dennison

Ward M Parkinson

Kevin David Oldknow

Wayne A Kennedy

Divya Kadam

Srini Nedunoori

A method to determine fuel consumption, energy consumption, or both fuel consumption and energy consumption, during one test train run, or a plurality of test train runs, that is associated with modifying an operating parameter is provided. The method includes determining a reference fuel/energy consumption, and a cumulative ITE for one, or a plurality of reference train runs (CITE) over a portion of track, and correcting the reference fuel/energy consumption using the CITEof the one, or a plurality of reference train runs, to produce a corrected reference fuel/energy consumption value. The operating parameter is modified, and a modified fuel/energy consumption and cumulative ITE for the one, or a plurality of test train runs (CITE), over the portion of track is determined, and a corrected test fuel/energy consumption value is obtained by correcting the modified fuel/energy consumption using the CITEof the one, or a plurality of test train runs. The corrected reference fuel/energy consumption value and the test fuel/energy consumption value are then compared to determine the effect of modifying the operating parameter on the fuel/energy consumption during the one test run, or a plurality of test train runs.

Cumulative inertial tractive effort

A method of manufacturing a phase change memory (PCM) includes forming a pinch plate layer transversely to a PCM layer that is insulated from the pinch plate layer by a dielectric layer. Biasing the pinch plate layer causes a depletion region to form in the PCM layer. During a read of the PCM in a reset or partial reset state the depletion region increases the resistance of the PCM layer significantly.

Method for forming a lateral phase change memory element

A phase change memory cell may be formed with a pair of chalcogenide phase change layers that are separated by a breakdown layer. The breakdown layer may be broken down prior to use of the memory so that a conductive breakdown point is defined within the breakdown layer. In some cases, the breakdown point may be well isolated from the surrounding atmosphere, reducing heat losses and decreasing current consumption. In addition, in some cases, the breakdown point may be well isolated from overlying and underlying electrodes, reducing issues related to contamination. The breakdown point may be placed between a pair of chalcogenide layers with the electrodes outbound of the two chalcogenide layers.

Forming phase change memories with a breakdown layer sandwiched by phase change memory material

A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200&#xb0; C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.

Programming a normally single phase chalcogenide material for use as a memory of FPLA

An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some embodiments, reducing leakage.

Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element

An electronic system includes a control device in combination with an ovonic threshold switch (OTS). The control device, which may be a field effect transistor, a bipolar junction transistor, or a three-terminal ovonic threshold switch, for example, is configured to trigger the OTS. The OTS, a high current-density device, may be configured to drive greater loads than the control device itself would be capable of driving.

Method and apparatus for driving an electronic load

Programming a normally single phase chalcogenide material for use as a memory or FPLA

An endless manual control for use in automation systems, such as automated recording consoles, which controls levels and other parameters of audio, video and other signals, by generating, storing, sending and receiving electronic control signals. The control's internal circuitry translates control movements into electronic signals describing the control's movements. These electronic signals, including external electronic signals which are inputed during certain modes of operation, are fed into a circuit for updating the circuit's memory of control levels. When either the minimum or maximum control level extreme is reached, the circuitry triggers a mechanism to stop the manual rotation of the control in the direction which had or would have caused that control level extreme to be reached.

Automation control with improved operator/system interface

Growing community of inventors

Cupertino, CA, United States of America

John M Peters