Freescale Semiconductor,inc.

Nxp USA, Inc.

John M McKenna

Patrice M Parris

Weize Chen

Richard J De Souza

Md M Hoque

Moaniss Zitouni

Jennifer H Morrison

An ISFET includes a control gate coupled to a floating gate in a CMOS device. The control gate, for example, a poly-to-well capacitor, is configured to receive a bias voltage and effect movement of a trapped charge between the control gate and the floating gate. The threshold voltage of the ISFET can therefore by trimmed to a predetermined value, thereby storing the trim information (the amount of trapped charge in the floating gate) within the ISFET itself.

Methods and apparatus for an ISFET

A tunable antifuse element () includes a substrate material () having an active area () formed in a surface, a gate electrode () having at least a portion positioned above the active area (), and a dielectric layer () disposed between the gate electrode () and the active area (). The dielectric layer () includes a tunable stepped structure (). During operation, a voltage applied between the gate electrode () and the active area () creates a current path through the dielectric layer () and a rupture of the dielectric layer () in a rupture region (). The dielectric layer () is tunable by varying the stepped layer thicknesses and the geometry of the layer.

Tunable antifuse elements

A tunable antifuse element () and method of fabricating the tunable antifuse element, including a substrate material () having an active area () formed in a surface, a gate electrode () having at least a portion positioned above the active area (), and a dielectric layer () disposed between the gate electrode () and the active area (). The dielectric layer () including the fabrication of one of a tunable stepped structure (). During operation, a voltage applied between the gate electrode () and the active area () creates a current path through the dielectric layer () and a rupture of the dielectric layer () in a plurality of rupture regions (). The dielectric layer () is tunable by varying the stepped layer thicknesses and the geometry of the layer.

Tunable antifuse element and method of manufacture

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Chandler, AZ, United States of America

John M McKenna