Entegris, Inc.

Other

Advanced Technology Materials, Inc.

John M Cleary

Scott L Battle

Thomas H Baum

Bryan Clark Hendrix

John N Gregg

Donn Naito

Chongying Xu

Jose I Arno

Michael J Wodjenski

Robert Wright, Jr

David Walter Peters

Thomas M Cameron

David Kuiper

Jordan Hodges

Manish Khandelwal

Sebum Cheon

Kyle Bartosh

John P Mohrhauser

James J Cleary

Philip Sh Chen

Donn K Naito

Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products.

Cobalt precursors

Provided is a process for preparing certain silane precursor compounds, e.g., triiodosilane from trichlorosilane utilizing lithium iodide in powder form and catalyzed by tertiary amines. The process provides triiodosilane in high yields and high purity. Triiodosilane is a precursor compound useful in the atomic layer deposition of silicon onto various microelectronic device structures.

Preparation of triiodosilanes

Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Solid precursor-based delivery of fluid utilizing controlled solids morphology

A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100&#xb0; C. to produce the solid source material as a sintered solid.

High-purity tungsten hexacarbonyl for solid source delivery

Vaporizers are described, suited for vaporizing a vaporizable solid source materials to form vapor for subsequent use, e.g., a deposition of metal from organometallic source material vapor on a substrate for manufacture of integrated circuitry, LEDs, photovoltaic panels, and the like. Methods are described of fabricating such vaporizers, including methods of reconfiguring up-flow vaporizers for down-flow operation to accommodate higher flow rate solid delivery of source material vapor in applications requiring same.

Solid vaporizer

Systems, reagent support trays, particle suppression devices, and methods are disclosed. In one aspect, a system includes a vaporizer vessel having one or more interior walls enclosing an interior volume and a plurality of reagent support trays configured to be vertically stackable within the interior volume. Each of the plurality of reagent support trays is configured to be vertically stackable within the interior volume to form a stack of reagent support trays. One or more of the plurality of reagent support trays is configured to redirect a flow of a gas passing between adjacent reagent support trays in the stack of reagent support trays to cause the flow of gas to interact with the source reagent material in a particular reagent support tray before passing into a next of the plurality of reagent support trays in the stack of reagent support trays.

Source reagent-based delivery of fluid with high material flux for batch deposition

Electronic restoration of switching to an 'off' condition at the end of a prescribed and controllable time interval, with an indication of termination being provided before the end of the interval. The electronic circuitry for controlling the switching can be substantially integrated to permit compact, small space installation in, for example, the housings of conventional mechanical switches.

Electronic controlled-duration switching

Switches of the kind formed by a controller with an actuator which is automatically restored to its 'off' position at the end of a prescribed time interval and provides an indication shortly before the end of the interval. The controller may be manually energized or motor driven.

Controlled duration switch

Growing community of inventors

New Fairfield, CT, United States of America

John M Cleary