Raytheon Company

John Logan

Brian D Schultz

Kiuchul Hwang

Adam E Peczalski

Christos Thomidis

Eduardo M Chumbes

Jason C Soric

Robert E Leoni

Nicholas J Kolias

Theodore D Kennedy

Abbas Torabi

Clay T Long

David Irvine

Abraham Rubin

James Gerlach

A bulk acoustic wave (BAW) resonator includes a piezoelectric layer oriented so that an N-polar surface forms a frontside surface that faces away from the substrate while a metal-polar surface forms the backside surface and faces toward the substrate. A process for the manufacture of a bulk acoustic wave (BAW) resonator includes orienting a piezoelectric layer on a substrate so that an N-polar surface forms a frontside surface that faces away from the substrate while a metal-polar surface forms the backside surface and faces toward the substrate; etching a via though the backside of the substrate to the metal-polar surface of the piezoelectric layer; and removing etch residue from a sidewall of the resonator cavity.

N-polar rare-earth III-nitride bulk acoustic wave resonator

Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.

Epitaxial growth of aluminum on aluminum-nitride compounds

A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial layer formed on the first epitaxial layer opposite the top surface of the substrate, the second epitaxial layer comprising single-crystal scandium aluminum nitride material; and a third epitaxial layer formed on the second epitaxial layer opposite the first epitaxial layer, the third layer comprising single-crystal aluminum nitride material.

Strain compensated rare earth group III-nitride heterostructures

An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.

Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors

A High Electron Mobility Transistor structure having: a GaN buffer layer disposed on the substrate; a doped GaN layer disposed on, and in direct contact with, the buffer layer, such doped GaN layer being doped with more than one different dopants; an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN layer, such UID GaN channel layer having a 2DEG channel therein; a barrier layer on, and in direct contact with, the UID GaN channel layer. One of the dopants is beryllium and another one of the dopants is carbon.

Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement

A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair of Group III-Nitride layers; and an electrical contact in Schottky contact with a portion of the cap beryllium doped, Group III-Nitride layer.

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Lawrence, MA, United States of America

John Logan