Hewlett-packard Development Company, L.p.

Hewlett-packard Company

Samsung Electronics Co., Ltd.

John Liebeskind

Chien-Hua Chen

James McKinnell

David A Champion

Zhizhang Chen

Sriram Ramamoorthi

Ronald L Enck

Jennifer Shih

Charles Craig Haluzak

Michael John Regan

Andrew L Van Brocklin

Paul J Benning

Ronald A Hellekson

Richard W Seaver

William R Wagner

Donald B Ouchida

Jeffrey M Valley

Pavan Suri

Daniel S Kuehler

James C Mckinnell

An example sinter system includes a sinter gas inlet at a sinter furnace for a sinter gas, a tracer gas inlet at the sinter furnace for a tracer gas different from the sinter gas, and an outlet at the sinter furnace to output the sinter gas and the tracer gas. The example sinter system further includes: a support structure to support a sample green object in the sinter furnace, an opening at the support structure connected to the tracer gas inlet, the opening to output the tracer gas into the sinter furnace, and a detector to: determine an amount of the tracer gas flowing through the outlet during a sinter process as a sample green object positioned on the support structure changes shape during the sinter process with respect to the opening and modifies a flow rate of the tracer gas to the outlet; and determine when to stop the sinter process based on a determined amount of the tracer gas.

Tracer gas endpoint-monitored sinter systems

In an example implementation, a sintering system includes a detection gas line to enable gas to flow into a sintering furnace from an external gas supply. The system includes a detection gas port inside the furnace through which gas from the detection gas line is to flow into the furnace, and a registration feature inside the furnace to enable positioning of a token green object proximate the gas detection port. The system includes a gas flow monitor to detect changes in gas flow through the detection gas line when the token green object shrinks during a sintering process in the furnace.

Sintering furnace

In an example implementation, a sintering system includes optical fiber installed into a sintering furnace. A support structure inside the furnace is to support a token green object in a predetermined position and to hold a distal end of the fiber adjacent to the predetermined position. A light source is operably engaged at a proximal end of the fiber to transmit light through the fiber into the furnace. A light detector is operably engaged at the proximal end of the fiber to receive reflected light through the fiber that scatters off a surface of the token green object.

Transmitting and detecting light with optical fiber during sintering

A fluid ejection cartridge for a fluid ejection device includes a print head, having a plurality of fluid ejection nozzles, a fluid reservoir, configured to hold a fluid to be ejected from the print head, and a selectively breachable isolator mechanism, separating the fluid reservoir and the print head.

Fluid ejection cartridge

A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.

Vacuum device having non-evaporable getter component with increased exposed surface area

A device including a substrate, a getter structure coupled to the substrate, and a photomask disposed over the getter structure. The photomask has a substantially transmissive and a substantially non-transmissive region. The substantially transmissive region substantially aligns with the getter structure.

Device having a getter structure and a photomask

A system and method bond wafers using localized induction heating. One or more induction micro-heaters are formed with a first substrate to be bonded. A second substrate is positioned in intimate contact with the induction micro-heaters. An alternating magnetic field is generated to induce a current in the induction micro-heaters, to form one or more bonds between the first substrate and the second substrate.

Systems and methods for wafer bonding by localized induction heating

An interconnect structure including a substrate, an interconnect device formed on the substrate, and a test device formed on the substrate.

Interconnect structure

A micro-fabricated device, includes a support structure having an aperture formed therein, and a device substrate disposed within the aperture. The micro-fabricated device further includes a thermally isolating structure thermally coupling the device substrate to the support structure. The thermally isolating structure includes at least one n-doped region and at least one p-doped region formed on or in the thermally isolating structure and separated from each other. In addition, the thermally isolating structure includes an electrical interconnect connecting at least one n-doped region and at least one p-doped region, forming an integrated thermoelectric device.

Micro-fabricated device with thermoelectric device and method of making

Determining a beam size of an emitter for a data storage medium is disclosed. The emitter, having an emitted beam, is moved across conductor of a detector. Current through the conductor, resulting from the emitted beam as the emitter moves across the detector, is measured. The size of the emitted beam of the emitter is determined based on the position of the emitter and the measured current.

Determining emitter beam size for data storage medium

Vacuum device having a getter

An electronic device that is sealed under vacuum includes a substrate, a transistor formed on the substrate, and a dielectric layer covering at least a portion of the transistor. The electronic device further includes a layer of non-evaporable getter material disposed on a portion of the dielectric layer; and a vacuum device disposed on a portion of the substrate. Electrical power pulses activate the non-evaporable getter material.

Electronic device sealed under vacuum containing a getter and method of operation

A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.

Method of making a getter structure

An electrical device includes a plurality of integrated circuits respectively fabricated in a first substrate bonded to a second substrate by a bond that deforms above, but not below, a deformation condition. The deformation condition can be a predetermined pressure from opposing surfaces on the first and second substrates or it can be a predetermined combination of temperature and pressure from opposing surfaces on the first and second substrates.

Electrical device and method of making

An integrated circuit includes a substrate having an etched surface and a non-etched surface. The etched surface contains circuit elements and the non-etched surface contains a bonding surface. The non-etched surface is located at a predetermined height from the etched surface. Bonding this integrated circuit with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

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Corvallis, OR, United States of America

John Liebeskind