Irresistible Materials, Ltd

Other

John L Roth

Andreas Frommhold

Edward A Jackson

Thomas A Lada

Dongxu Yang

Alex Philip Graham Robinson

Alex Phillip Graham Robinson

Alexandra McClelland

Xiang Xue

Alan G Brown

Alex P G Robinson

David A Ure

Tom Lada

Greg O'Callahan

Carmen Popescu

Guy Dawson

Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry.

Hard-mask composition

The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.

Enhanced EUV photoresist materials, formulations and processes

The present disclosure relates to novel multiple trigger monomer containing negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions utilize novel monomers and mixtures of novel monomers. The methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.

Multiple trigger monomer containing photoresist compositions and method

Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.

The present disclosure relates to novel multiple trigger negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.

Multiple trigger photoresist compositions and methods

The present application for patent discloses a composition of matter comprising: comprising a solvent; and an ester having a chemical structure chosen from (I), (II), or (III); wherein X and Y are the same or different, wherein at least one of X and Y comprises an acid labile group, wherein Ris a saturated or unsaturated group having from 1-4 carbon atoms, Ris chosen from hydrogen or a saturated or unsaturated group having from 1-4 carbon atoms, Ris a saturated or unsaturated group having from 1-4 carbon atoms, and Ris a saturated or unsaturated group having from 1-4 carbon atoms and Ais an anion.

Composition of matter and molecular resist made therefrom

Disclosed and claimed herein is a composition of matter having a general structure chosen from (I), (II), (III) or (IV); wherein X and Y are the same or different, wherein at least one of X and Y comprises an acid labile group, wherein Ris a saturated or unsaturated group having from 1-4 carbon atoms, Ris chosen from hydrogen or a saturated or unsaturated group having from 1-4 carbon atoms, Ris a saturated or unsaturated group having from 1-4 carbon atoms, and Ris a saturated or unsaturated group having from 1-4 carbon atoms.

Disclosed herein is a composition of matter having a general structure chosen from (I), (II), (III) or (IV); at least one photo acid generator; at least one crosslinker; and at least one solvent; wherein X and Y are the same or different, wherein at least one of X and Y comprises an acid labile group, wherein Ris a saturated or unsaturated group having from 1-4 carbon atoms, Ris chosen from hydrogen or a saturated or unsaturated group having from 1-4 carbon atoms, Ris a saturated or unsaturated group having from 1-4 carbon atoms, and Ris a saturated or unsaturated group having from 1-4 carbon atoms.

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Cohasset, MA, United States of America

John L Roth