Motorola Corporation

Arizona State University

John L Edwards, Jr

Ravindranath Droopad

Yi Wei

Zhiyi Jimmy Yu

Xiaoming Hu

James Bradley Craigo

Alexander A Demkov

Yong Liang

Ignatius S T Tsong

R Bruce Doak

Dirk C Jordan

Victor M Torres

David J Smith

A method for removing silicon oxide from a surface of a substrate is disclosed. The method includes depositing material onto the silicon oxide ( ) and heating the substrate surface to a sufficient temperature to form volatile compounds including the silicon oxide and the deposited material ( ). The method also includes heating the surface to a sufficient temperature to remove any remaining deposited material ( ).

Method of removing silicon oxide from a surface of a substrate

A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.

Method of removing an amorphous oxide from a monocrystalline surface

In semiconductor devices such as laser diodes (LD) and light emitting diodes (LED) based on gallium nitride thin films, low defect density is desired in the gallium nitride film. In the fabrication of such devices on a silicon carbide substrate surface, the gallium nitride film is formed on the silicon carbide substrate after the substrate surface is etched using hydrogen at an elevated temperature. In another embodiment, an aluminum nitride film is formed as a buffer layer between the gallium nitride film and the silicon carbide substrate, and, prior to aluminum nitride formation, the substrate surface is etched using hydrogen at an elevated temperature.

Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices

Growing community of inventors

Phoenix, AZ, United States of America

John L Edwards, Jr