Vlsi Technology, Inc.

Other

The Patent Store, LLC

John L Cain

Chang-Ou Lee

Landon B Vines

Felix H Fujishiro

Sigmund A Koenigseder

William D Hiner

William P Marsh

Michael E Costabile

Michael P Relue

James C Keeven

Lloyd Herbert King, Jr

Michael Belgeri

Ramiro Solis

Miguel A Delgado

Tammy Donnelly

Katherine Hintze

Allison Rezabek

Christine Lancaster

Stephen Cannizzaro

An irrigation device having a flexible container for holding water while delivering the water directly into the soil with the irrigation device having a filler neck to facilitate filling and inhibit backflow therethrough with a cap that can quickly seal the filler neck after the irrigation device is filled and a handhold useable to hold the filler neck in an elevated condition during the filling and closing of the flexible container.

Irrigation device

An open-face electrical wire connector for forming an electrical connection to a wire connector lug wherein the wire connector lug, which is free of any sealant, is located in a portion of a housing that can be brought into engagement with another portion of a housing, which carries a sealant, to cause the sealant to flow around the wire connector lug and the electrical connection therein for on-the-go formation of a sealant covered electrical connection.

Wire connector

In a dry non-isotropic etching process, backside cooling by helium controls the rate and uniformity of etching in a thermal silicon layer, the taper of profiles etched into silicon dioxide layers, and the dimension and uniformity of etched structures in a polycide or polysilicon layer, on the surface of a silicon wafer. Helium pressures from greater than 2 torr to more than 10 torr are satisfactorily utilized to produce these effects.

Optimization of dry etching through the control of helium backside

An improved anneal process is disclosed for use in the preparation of a dielectric layer, especially an intermetal dielectric layer. An oxide layer is deposited using a H.sub.2 O-TEOS PECVD process. A vacuum bake is used to minimize or eliminate volatile water, hydrogen, and hydrocarbon impurities in the dielectric layer. An oxidation anneal is then performed to scavenge any remaining undesirable species, and to provide for densification of the dielectric layer.

Densification in an intermetal dielectric film

An improved fluid distribution head for a plasma processing system characterized by a non-planar dispersion plate provided with a plurality of apertures formed therethrough, and a mechanism for flowing a process gas through the apertures of the dispersion plate. The non-planar dispersion plate is preferably provided with a concave, spherical portion having a radius of curvature of at least four feet. The mechanism for flowing the process gas through the apertures includes an enclosure defining a chamber which communicates with the dispersion plate, a gas inlet communicating with the chamber, and a source of process gas coupled to the gas inlet. The fluid distribution head preferably forms a part of a complete plasma processing system including a wafer pedestal and an R.F. generator coupled to the pedestal to form a plasma between the dispersion plate and the wafer from the process gas flowing from the dispersion plate. A method for processing a semiconductor wafer includes the steps of clamping a wafer to a pedestal (thereby imposing a curvature on the wafer) and releasing a process fluid over the wafer through a plurality of apertures provided in a non-planar dispersion plate having a complementary curvature to the curvature of the wafer.

Method of processing a semiconductor wafer

Plasma processing apparatus

A method of metalization of semiconductor devices wherein predominantly aluminum metal films incorporate a minor amount of magnesium in admixture with the aluminum, or in layered juxtaposition with the aluminum layer, to provide resistance to corrosion, particularly acidic corrosion.

Method of using corrosion prohibiters in aluminum alloy films

A system for evacuating a reactor chamber includes a main evacuation line connected at one end thereof to the reactor chamber and at another end thereof to a means for creating a partial vacuum. A valve in the main evacuation line divides the line into a chamber side and a vacuum side. A second line is connected at one end to the vacuum side of the main evacuation line and at another end to a fluid supply source. As the valve in the main evacuation line is opened, fluid is supplied through the second line to the main evacuation line to prevent rapid, turbulence-inducing pressure drops in the reactor chamber.

Pumping system for evacuating reactor chambers

This invention is directed to a plasma etching process for the etching of bi-layer passivation films comprising silicon nitride and silicon oxide wherein the etching gas is a selectivity enhancing ratio of gases selected from the group consisting of CHF.sub.3 /SF.sub.6, CHF.sub.3 /O.sub.2, and CHF.sub.3 /C.sub.2 F.sub.6.

Selective dry-etching of bi-layer passivation films

Disclosed are methods for reducing the degree of underetching and particulate contamination occurring during dry non-isotropic etching of a polycide layer on the surface of a silicon wafer maintained in a wafer holder wherein the backside of the holder is cooled with a stream of helium gas. Specifically, in the disclosed methods, dry non-isotropic etching of the polycide layer is conducted either in the absence of backside cooling or the helium gas flow utilized in backside cooling is maintained at a pressure of no more than 3 torr.

Reduction of polycide residues through helium backside pressure control

A dry etcher and method using two chambers can be used for anisotropic or isotropic etching. A pressure differential is created between the first and second chambers using a passage between the first and second chambers. Additionally, baffles which remove some of the ions created in the first chamber are used.

New dry etch technique

Increases in the contact resistance at the aluminum-silicon interface in contact points is inhibited by employing a molybdenum boride conductive barrier layer between the aluminum conductor and the silicon substrate.

Molybdenum boride barrier layers between aluminum and silicon at contact

A semiconductor processing method provides for plasma-enhanced chemical-vapor deposition (PECVD) for intermetal dielectrics while minimizing risk of gate oxide impairment due to plasma discharge. A protective oxide sublayer is deposited without using high-power PECVD. The protective sublayer can be deposited by using chemical-vapor deposition (CVD) without plasma enhancement or by a lower-power PECVD. In the latter case, the initial rf power of the plasma is selected to be low enough to ensure that the gate oxide is not breached in the event of a plasma discharge. The protective sublayer can be thick enough to maintain its integrity in the event of a plasma discharge even during a higher-power PECVD deposition.

Integrated-circuit processing with progressive intermetal-dielectric

A dual mode plasma etching system and method for plasma etching endpoint detection etches a designated layer of a specified material on a substrate without exposing the substrate surface to a high-energy etching plasma. The substrate is prepared for etching by depositing a thin film of a second material distinct from the specified material on the substrate surface. The designated layer of specified material is formed on top of the thin film. Etching of the designated layer in a plasma etching chamber then proceeds while a preferably high level of power is applied to the plasma etching chamber. The dual mode etching system generates an endpoint signal resulting in termination of the high-power etch when the plasma etching chamber begins etching the thin film of second material. Portions of the thin film remaining on the substrate are then removed using a process less damaging to the substrate than etching at high power.

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Schertz, TX, United States of America

John L Cain