Rockwell International Corporation

John L Archer

Thomas T Chen

Tsutomu Kobayashi

Michael T Elliott

David M Heinz

Leonard R Tocci

Jack E Mee

Thomas N Hamilton

Leonard Tocci

Jeffrey L Williams

In an improved bubble lattice file (BLF) structure, two adjacent layers of magnetic bubble domain material are utilized to provide separate media for supporting carrier bubbles or coded bubbles. The coded bubbles, in one layer, represent data stored in the bubble lattice file. The carrier bubbles, in another layer, are magnetically coupled to the coded bubbles and are used in manipulation thereof. The magnetic bubble domain layers may be separated by an appropriate interface layer or surface. The lattice file area, or storage area, is biased by a single layer of bias material while adjacent areas, such as an input/output region, include a pair of biasing layers disposed on opposite sides of the adjacent layer structure. This composite permits an improved bubble lattice file structure which utilizes the storage capabilities of bubble lattice file memories as well as the operating capabilities of so-called conventional magnetic bubble domain device techniques.

Bubble lattice file structure

A magnetic bubble domain device including a magnetoresistive element for detecting the presence of bubble domains which are stretched in a direction orthogonal to the propagation direction of the bubble domains.

Magnetic bubble domain detection device

A magnetic memory organization for single wall magnetic domains comprising a primary domain propagation loop, secondary propagation loops which may be serially coupled to the primary loop for enlarging the capacity of the primary loop, and a conductor network for altering the magnetic properties of the loops to connect operative secondary loops in series with the primary loop and to bypass inoperative secondary loops.

Multiple loop shift register having redundancy

The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system.

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Orange, CA, United States of America

John L Archer