International Business Machines Corporation

John K Debrosse

Chih-Chao Yang

Daniel Christopher Worledge

Michele M Franceschini

Todd Edward Takken

Blake G Fitch

Chandrasekharan Kothandaraman

Anthony J Annunziata

Gary Bela Bronner

Michael C Gaidis

Donald M Kenney

A memory includes multiple non-volatile memory devices, each having multiple nonvolatile memory cells. A write controller is configured to stream bits to the memory devices using a write data channel that optimizes a speed of writing to the memory devices to provide writes at a first speed. A read controller is configured to read bits from the memory devices, at a second speed slower than the first speed, using a read channel. A bi-directional bus that both the write controller and the self-referenced read controller share to access the plurality of non-volatile memory devices.

Nonvolatile memory interface for metadata shadowing

A memory includes non-volatile memory devices, each of which has multiple nonvolatile memory cells. A write controller streams bits to the memory devices in groups of N bits using a write data channel having write bus drivers, receivers and write bus topology that take advantage of high-speed signaling to optimize a speed of writing to the memory devices. Consecutive groups of bits are written to consecutive memory cells within respective memory devices. A self-referenced read controller reads bits from the memory devices using a read channel having read drivers, receivers, and read bus topology that include no design requirements for high-speed or low-latency data transmission.

Magnetic tunnel junction antifuse devices are protected from degradation caused by programming voltage drop across the gates of unselected magnetic tunnel junction antifuses by connecting said magnetic tunnel junction serially with a first field effect transistor and a second field effect transistor, the first field effect transistor having its gate connected to a positive supply voltage while the gate of the second field effect transistor is switchably connected to a programming voltage.

Magnetic tunnel junction based anti-fuses with cascoded transistors

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Colchester, VT, United States of America

John K Debrosse