Nanosys, Inc.

Shoei Chemical Inc.

Primus Power Corporation

Coventya Gmbh

John Joseph Curley

Chunming Wang

Christian Justus Ippen

Ilan Jen-La Plante

Wenzhou Guo

Alexander Tu

Hooman Hafezi

Charles Hotz

Ashenafi Damtew Mamuye

Christopher Sunderland

Nicholas Williams

Yeewah Annie Chow

Ruiqing Ma

Jason T Hartlove

George S Bokisa

Donald A Zehnder

Jay Yamanaga

Gerardo Jose La O'

Ravisubhash Tangirala

Benjamin Newmeyer

Minghu Tu

Nahyoung Kim

Jason Travis Tillman

Dylan Charles Hamilton

Charlie Hotz

Ke Gong

Stephen Joseph Carpmail

Joseph Brian Apisdorf

Kevin Cheung

Tim Slugocki

Xiaofeng Zhang

This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using in situ prepared zinc dioleate and/or a metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.

Methods to improve the quantum yield of indium phosphide quantum dots

Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

Bright silver based quaternary nanostructures

The invention relates to highly luminescent nanostructures with improved blue light absorbance, particularly core/shell nanostructures comprising a ZnSe core and InP and/or ZnS shell layers. The invention also relates to methods of producing such nanostructures.

Cadmium free reverse type 1 nanostructures with improved blue light absorption for thin film applications

This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.

Small molecule passivation of quantum dots for increased quantum yield

The invention relates to highly stable nanostructures with inorganic ligands for electroluminescent devices, particularly nanostructure composition comprising at least one population of nanostructures; and at least one fluoride containing ligand bound to the surface of the nanostructure; wherein the fluoride containing ligand is selected from the group consisting of a fluorozincate, tetrafluoroborate, and hexafluorophosphate. The invention also relates to highly stable nanostructures comprising at least one population of nanostructures and fluoride anions bound to the surface of the nanostructure. The invention also relates to methods of producing such nanostructures.

Nanostructures with inorganic ligands for electroluminescent devices

The invention relates to highly luminescent nanostructures with strong blue light absorbance, particularly core/shell nanostructures comprising an InGaP core and ZnSe and/or ZnS shell layers, wherein 0&#x3c;x&#x3c;1. The invention also relates to methods of producing such nanostructures.

Methods for synthesis of inorganic nanostructures using molten salt chemistry

Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.

InP quantum dots with GaP and AlP shells and methods of producing the same

An aqueous electrolyte for a metal-halogen flow battery includes an electrolyte that includes zinc bromide, a chelating agent, and a metal plating enhancer. The metal plating enhancer may include Bi, Pb, Te, Se, and/or Tl, salts thereof, or any combination thereof.

Flow battery electrolyte compositions containing a chelating agent and a metal plating enhancer

A metal-halogen flow battery system includes an electrolyte composition that includes an aqueous solution including a metal halide, a halogen, a metal plating enhancer and at least one of an anti-dendrite agent, and an anti-corrosion agent.

Electrolyte compositions for use in a metal-halogen flow battery

The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.

Use of heteroleptic indium hydroxides as precursors for INP nanocrystals

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San Francisco, CA, United States of America

John Joseph Curley