Bell Telephone Laboratories

Agere Systems Inc.

Agere Systems Guardian Corp.

John Joseph Bastek

Thomas Joseph Krutsick

Robert D Plummer

Integrated circuit devices are formed in a substrate wafer using selective epitaxial growth (SEG). Non-uniform epitaxial wafer thickness results when the distribution of SEG regions across the surface of the wafer is non-uniform, resulting in loading effects during the growth process. Loading effects are minimized according to the invention by adding passive SEG regions thereby giving a relatively even distribution of SEG growth regions on the wafer. The passive regions remain unprocessed in the finished IC device.

Integrated circuit device substrates with selective epitaxial growth thickness compensation

Manufacture of dielectrically isolated integrated circuits

A contact structure to the light emitting surface 19 of a light emitting device 10 having an array of small distributed contacts 14 is made by selectively depositing a larger area bonding pad 15 over a portion of the distributed contacts. The small contacts not covered by the bonding pad then are removed by sputter etching and contact to the device is made by wire bonding a lead 17 to the bonding pad.

Growing community of inventors

Reading, PA, United States of America

John Joseph Bastek