International Business Machines Corporation

Tokyo Electron Limited

John Jacob Yurkas

Fenton Read McFeely

Vijay Narayanan

Kenneth Parker Rodbell

Supratik Guha

Sandra Guy Malhotra

Andrew Herbert Simon

Douglas Andrew Buchanan

Cevdet Ismail Noyan

Kevin K Chan

Shu-Jen Han

Paul Michael Solomon

Damon B Farmer

Yumiko Kawano

James Bowler Hannon

Alessandro Cesare Callegari

Jianshi Tang

Hideaki Yamasaki

Stephan Alan Cohen

Robert Rosenberg

Erin C Jones

Ismail C Noyan

Gert J Leusink

Satoshi Oida

Hyungjun Kim

Fenton Reed Mc Feely

Jennifer L Gardner

F Read McFeely

Cyril Cabral, Jr

Alejandro Gabriel Schrott

Deborah A Neumayer

Matthew Warren Copel

Tatsuo Hatano

Christopher Peter D'Emic

Atsushi Gomi

Mitsuhiro Tachibana

Ferenc Miklos Bozso

Tsukasa Matsuda

Peter Stevens Locke

Ricky S Amos

Kazuhito Nakamura

Russell D Allen

Koumei Matsuzava

A resistive element in an electrochemical artificial neural network, includes a transition metal oxide thin film forming a working electrode, a pair of first electrodes connected to the working electrode, and a reference electrode for electrochemical doping of the working electrode. The biasing of the pair of first electrodes with respect to the reference electrode according to a determination of conductivity between the pair of first electrodes controls the resistance of the working electrode.

Architecture for an electrochemical artificial neural network

Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed over a surface of a substrate. An insulating layer is formed over the nanotube such that end portions of the nanotube are exposed. A low work function metal is formed over the end portions of the nanotube and a wetting layer is formed between the low work function metal and the nanotube.

Enhancing drive current and increasing device yield in N-type carbon nanotube field effect transistors

Enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors

A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge), antimony (Sb) and nitrogen (N) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of nitrogen-doped GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400&#xb0; C., which makes the inventive method compatible with existing interconnect processes and materials. In some embodiments, the inventive method is a non-selective CVD process, which means that the nitrogen-doped GeSb materials are deposited equally well on insulating and non-insulating materials. In other embodiments, a selective CVD process is provided in which the nitrogen-doped GeSb materials are deposited only on regions of a substrate in a metal which is capable of forming an eutectic alloy with germanium.

Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony

A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.

Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation

A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO, AlOand other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000&#xb0; C. A low temperature/low pressure CVD technique with Re(CO)as the source material is used when Re is to be deposited.

High temperature processing compatible metal gate electrode for pFETS and methods for fabrication

A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material.

Metal catalyzed selective deposition of materials including germanium and antimony

A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400&#xb0; C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.

Process for chemical vapor deposition of materials with via filling capability and structure formed thereby

A dispenser system for use in atomic beam assisted metal organic chemical vapor deposition is provided as well as a method of depositing an ultra-thin film using the same. The inventive dispenser system includes an atomic source having an unimpeded line of site to a substrate and an annular metal organic chemical vapor deposition showerhead having a plurality of nozzles for delivering a precursor to the substrate. In accordance with the present invention, each of the nozzles present on the showerhead is angled to provide precursor beam trajectories that crossover and are non-intercepting.

Dispenser system for atomic beam assisted metal organic chemical vapor deposition (MOCVD)

The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO), as the source material.

Ultra thin, single phase, diffusion barrier for metal conductors

A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH))(NC(CH)(CH))) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

Method of forming a tantalum-containing gate electrode structure

A deposition member adapted for discharging a deposition material during a deposition process can acquire a coating during the deposition. Such an initial emissivity value is selected for the deposition member, before any of the coating became deposited, that the emissivity of the deposition member remains substantially unchanged during the deposition process. In a representative embodiment the deposition member is coated with an appropriate thin layer for achieving the selected emissivity value.

Constant emissivity deposition member

A method of depositing a metal or other desired material onto a substrate using a gas generated via the sublimation of solid material precursors, wherein a sold precursor is introduced into a liquid in a bubbler apparatus so that the bubbler then contains vapors of solid precursor, and then sweeping a carrier gas through the bubbler to a reactor containing a substrate which is coated with the precursor via chemical vapor deposition.

Delivery systems for gases for gases via the sublimation of solid precursors

A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

Method of forming a metal layer using an intermittent precursor gas flow process

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Stamford, CT, United States of America

John Jacob Yurkas