Northrop Grumman Systems Corporation

John J Talvacchio

Erica C Folk

Patrick Bruckner Shea

Daniel Jonathan Ewing

John D Adam

Narsingh Bahadur Singh

David Phillips

Andre E Berghmans

Brian Paul Wagner

David A Kahler

David J Knuteson

Marc Eisenzweig Sherwin

Sean R McLaughlin

David J Phillips

Sean R Mclaughlin

A Josephson junction (JJ) quantum bit (qubits) arranged on a substrate is provided. In one embodiment, each qubit comprises a dielectric layer, a superconductor base layer portion underlying the dielectric layer and a first dielectric diffused region adjacent a dielectric layer/superconductor base layer portion junction. The qubit further comprise a superconductor mesa layer portion overlying the dielectric layer and having a second dielectric diffused region adjacent a dielectric layer/superconductor mesa layer portion junction, the first and second dielectric diffused regions mitigating further diffusion from other semiconductor processes on the plurality of qubits.

Quantum bits and methods of forming the same

Methods are provided of forming a Josephson junction (JJ) quantum bit (qubit). In one embodiment, the method comprises forming a JJ trilayer on a substrate. The JJ trilayer is comprised of a dielectric layer sandwiched between a bottom superconductor material layer and a top superconductor material layer. The method further comprises performing a thermal hardening process on the JJ trilayer to control diffusion of the dielectric layer into the bottom superconductor material layer and the top superconductor material layer, and etching openings in the JJ trilayer to form one or more JJ qubits.

Quantum bits and method of forming the same

A integrated circuit and methods for fabricating the circuit are provided. The circuit integrates at least one circuit element formed from a material that is superconducting at temperatures less than one hundred milliKelvin and at least one resistor connected to the circuit element. The resistor is formed from an alloy of transition metals that is resistive at temperatures less than one hundred milliKelvin.

Low temperature resistor for superconductor circuits

Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCuTiOor LaGaSiO. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

High dielectric capacitor materials and method of their production

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Ellicott City, MD, United States of America

John J Talvacchio