Scp Global Technologies, Inc.

Applied Materials, Inc.

John J Rosato

Jeffrey C Hudgens

Charles T Carlson

James S Papanu

Victor B Mimken

Martin C Bleck

Mike Rice

Paul G Lindquist

Penchala N Kankanala

Wyland L Atkins

Eric T Hansen

Curtis R Olson

Douglas Richards

Evanson G Baiya

Scott Meyer

M Rao Yalamanchili

Paul Lester

Constantin Predoaica

Jane Fahrenkrug

The present invention generally provides an apparatus and method for processing and transferring substrates in a multi-chamber processing system that has the capability of receiving and performing single substrate processing steps performed in parallel, while using the many favorable aspects of batch processing. Embodiments of the invention described herein are adapted to maximize system throughput, reduce system cost, reduce cost per substrate during processing, increase system reliability, improve the device yield on the processed substrates, and reduce system footprint. In one embodiment, the cluster tool is adapted to perform a wet/clean process sequence in which various substrate cleaning processes are performed on a substrate in the cluster tool.

Wet clean system design

Semiconductor substrates, particularly metallized substrates such as partially processed wafers, are rinsed with an aqueous medium, preferably deionized water, which further contains an anti-corrosive chemical agent or agents selected so as to minimize corrosion of metals resulting from contact with the water. The amount of anti-corrosive chemical agent is maintained in a controlled manner at a predetermined level or within a predetermined range preferably the rinsing with aqueous medium containing anticorrosive chemical agent is also carried out for a specified time, followed by further rinsing with deionized water alone. The rinsing may be combined, either in the same vessel or in a different vessel, with a subsequent drying step, such as a drying process utilizing a drying vapor introduced into the rinse tank or into a downstream vessel. The drying vapor condenses on the surface of the semiconductor material and reduces the surface tension of residual process fluid, causing the residual process fluid to flow off the surface.

Process and system for rinsing of semiconductor substrates

In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.

Apparatus and method for single substrate processing

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Boise, ID, United States of America

John J Rosato